Hybrid III-V semiconductor/silicon nanolaser

Abstract

ABSTRACT:Heterogeneous integration of III-V semiconductor compounds on Silicon on Insulator wafers is one the key technology for next generation on chip optical interconnects. Within this context the use of photonic crystals lasers represent a disruptive solution in terms of footprint, activation energy and ultrafast response. In this work, we propose and fabricate very compact laser sources integrated with a passive silicon waveguide circuitry, taking advantage of the efficient emission from III-V semiconductor photonic crystal nanocavities. Such micro sources often radiate only a fraction of their power into useful beams. Using a subjacent Silicon-On-Insulator waveguide we capture emitted light from the cavity, evanescently, and can also probe the cavity waveguide system in transmission in order to experimentally deduce the coupling factors.During the past decades, optical devices have played a crucial role in the domain of information and communication technology, due to their ability to bring efficient solutions to data transmission and processing. Indeed, optical communications have known tremendous development, through optical fibres backed by related devices and circuits composed of light sources, optical amplifiers, wavelength multiplexers, photodetectors, etc, which have greatly revolutionized telecommunication. Increasing attention is now being devoted to optical computer-com mainly concentrated in intra-and inter-chip interconnection applications [1,2], the convergence of optics and electronics at the chip level being a necessity for the next generation processors. Here, the issues that need to be tackled are the dispatching and sorting of the mind-boggling amount of information within small footprints and above all with reduced power consumption and dissipation [3].Thus, photonic circuits should be constituted of elements able to control perfectly the propagation of light with a view to achieve "passive" functions such as guiding and filtering as well as elements dedicated to active functions such as emission, detection, amplification, switching and a multitude of others capable of manipulating optical information at will.In this context, it is very unlikely that only one class of material will completely answer to all needs.Silicon photonics, enhanced by III-V based optical functions is considered to be as one of the key technologies combining the best of both materials leading to highly versatile hybrid photonics platform and opening up the field to large scale photonic integration. Indeed, Silicon transparency at telecom wavelengths and the high-index contrast with silica allows the fabrication of extremely compact lowloss single mode waveguides (~2dB/cm) [4,5] that can be used for bringing the information where it

Whispering Gallery Modes Formation in Small Nanocavities Based upon Crossed Nanobeam Structures

“…1(a) shows a typical schematic of orthogonal NBs (crossbeam cavity) with a central cavity design at intersection region of orthogonal photonic wire including tapered air-holes mirrors at each branch of the NBs. This kind of structure, in principle, may support orthogonal modes with high spatial overlap for frequency conversion in nonlinear optics [4,[15][16][17]. A typical mesh for our simulations is also shown in the Fig.…”

“…Design, fabrication, and experimental characterization of PhC nanobeams (NBs) containing cavities for applications from optical interconnect to biochemical sensors in variety of structures were goals of extensive researches [15][16][17][18].…”

Bottom-Up Abstract Modelling of Optical Networks-on-Chip: From Physical to Architectural Layer

“…The capability to exploit optical devices in a network of extrasmall dimensional scale, relies upon the last achievements of integrated photonics and, in particular, of SOI (Silicon-on-Insulator) technology 2 International Journal of Optics (basically for its full compatibility with CMOS logics) [6]. Many research units worldwide are working in this direction [7] and, furthermore, on the integration of silicon with III-V materials (also to include sources [8] and detectors [9] and to exploit nonlinearities [10]). By following the last trends of 3D integration in digital systems, it is possible to conceive a vertical stack with a top layer reserved to the optical communication network, superposed to silicon layers incorporating memory and processing units.…”

Fast All-Optical 10 Gb/s NRZ Wavelength Conversion and Power Limiting Function using Hybrid InP on SOI Nanocavity

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[4]. In this paper, we demonstrate for the first time wavelength conversion and power limiting function in a system experiment at 10 Gb/s using a PhC nanocavity based on III-V/SOI hybrid technology which incorporates an active material optimized for ultrafast operation.

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“…Fast All-Optical 10 Gb/s NRZ Wavelength Conversion and Power Limiting Function using Hybrid InP on SOI Nanocavity K. Lenglé (1,2) , M. Gay (1,2) , A. Bazin (3) , I. Sagnes (3) , R. Braive (3) , P. Monnier (3) , L. Bramerie (1,2) , T-N Nguyen (1,2) , C. Pareige (1,2) , R. Madec (1,2) , J-C. Simon (1,2) , R. Raj (3) , F. Raineri (3,4) (1) Université Européenne de Bretagne (UEB,) 5 Boulevard Laënnec, 35000 Rennes, France, lengle@enssat.fr (2) CNRS-Foton Laboratory (UMR 6082), Enssat, BP 80518, 22305 Lannion Cedex, France…”