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In this letter, the first packaged THz solid-state amplifier operating at 0.85 THz is reported. The InP HEMT amplifier achieves a noise figure as low as 11.1 dB with an associated gain of 13.6 dB at 0.85 THz using high InP HEMT transistors in a 10-stage coplanar waveguide integrated circuit. Output power up to 0.93 mW is measured. Index Terms-Coplanar waveguide (CPW), HEMT, low noise amplifier (LNA), MMIC, MM-Wave, sub-millimeter wave.

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In this paper, recent work on pushing InP HEMT amplifier technology to 850 GHz is reported. In particular, we have demonstrated on-wafer gain at this frequency. To our knowledge, this is the first time gain has been reported at this frequency. This achievement is possible by transistor scaling, frontside and backside feature scaling and detailed transistor modeling and design Index Terms -Terahertz, low noise amplifiers, power amplifiers

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