All-optical devices are proven to have broad range of applications in the areas of communication. These devices form the basic building blocks of complex integrated circuits. By integrating these devices in the fields like signal processing, chip designing and network computations, a much more efficient device can be achieved. The design of all-optical logic gates like NAND, NOR and XNOR using plasmonic based Y-shaped power combiner is implemented in this paper work. The concept of linear interference is applied in the combiner to achieve the desired logic gates. The work is simulated and analysed using Finite-Difference Time Domain (FDTD) method, which is valuated using MATLAB. The present work fits under the area of 60 µm2 which is smaller than the existing structures. The insertion loss, transmission efficiency and extinction ratio parameters are calculated and compared to variety of other designs.

In this digital era, all-optical logic gates (OLGs) proved its effectiveness in execution of high-speed computations. A unique construction of an all-optical OR, NOR, NAND gates based on the notion of power combiner employing metal–insulator–metal (MIM) waveguide in the Y-shape in a minimal imprint of 6.2 µm × 3 µm is presented and the structure is evaluated by finite-difference time-domain (FDTD) technique. The insertion loss (IL) and extinction-ratio (ER) for proposed model are 6 dB and 27.76 dB for NAND gate, 2 dB and 20.35 dB for NOR gate and 6 dB and 24.10 dB respectively. The simplified model is used in the construction of complex circuits to achieve greater efficiency, which contributes to the emergence of a new technique for designing plasmonic integrated circuits.

In this digital era, all-optical logic gates (OLGs) proved its effectiveness in execution of high-speed computations. A unique construction for all optical NAND gate based on the notion of power combiner employing metal–insulator–metal (MIM) waveguide in the Y-shape in a minimal imprint of 6.2 µm × 3 µm is presented and the structure is evaluated by finite-difference time-domain (FDTD) technique. The insertion loss (IL) and extinction-ratio (ER) for proposed model are 6 dB and 27.76 dB. The simplified model is used in the construction of complex circuits to achieve greater efficiency, which contributes to the emergence of a new technique for designing plasmonic integrated circuits.