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SUMMARYAn analysis of the flicker noise conversion to close-in phase noise in complementary metal-oxide semiconductor (CMOS) differential inductance-capacitance (LC)-voltage controlled oscillator is presented. The contribution of different mechanisms responsible for flicker noise to phase noise conversion is investigated from a theoretical point of view. Impulse sensitivity function theory is exploited to quantify flicker noise to phase noise conversion process from both tail and core transistors. The impact of different parasitic capacitances inside the active core on flicker noise to phase noise conversion is investigated. Also, it is shown how different flicker noise models for core metal-oxide semiconductor (MOS) transistors may result in different close-in phase noise behaviors. Based on the developed analysis, design guidelines for reducing the close-in phase noise are introduced.

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This paper describes a design procedure for mm-wave voltage controlled oscillator (VCO), based on large signal behavior of oscillator transconductance. Then, a new structure of LC-VCO is presented, which utilizes a transformer feedback to enhance the transconductance of the core transistors and to cancel the undesired parasitic effects. Using a 0.18-μm RF CMOS technology, the advantage of this VCO is examined by large signal analysis and simulation. The results illustrate improvement of 5 dB in phase-noise and 70% in tuning-range, compared to enhanced active gain conventional transformer feedback VCO. Finally, a compact layout for transformer design is proposed.