No abstract

Dual-gate organic field effect transistors (DG-OFETs), where two separate channels are formed at the organic semiconductor-dielectric interface, have attracted much attention owning to their high performance in comparison to single-gate OFET (SG-OFET). In this paper, an organic module of Atlas device simulator for a low voltage SG-OFET has been used to predict the electrical characteristics and performance parameters. Thereafter, an additional dielectric and gate electrode has been introduced to SG-OFET to achieve better performance. Electrical behaviors of low-voltage (≤ 3 V) DG-OFET have been studied by employing a symmetric configuration. This architecture exhibits a high drive current due to injection of sufficient charge carriers in both channels. The simulation results show higher drive current, carrier mobility and current on-off ratio, lower threshold voltage and subthreshold slope. These results demonstrate that the proposed symmetric configuration provide better performance when compared to the single gate.

Organic Field-Effect Transistors (OFETs) attract much interest recently and their proficiency and hence applications are being enhanced increasingly. The device simulation was performed using finite element two dimensional drift-diffusion simulations, the results obtained are compared with experiments data and a good match has been observed between them. This paper introduces a method for modeling the OFET based on Adaptive Network Fuzzy Inference System (ANFIS) approach, the required data for training of ANFIS has been obtained using Atlas 2D device simulator. Finally, we imported the ANFIS model in a circuit simulator like PSPICE, simulation results of the developed ANFIS subcircuit have indicated that the proposed fuzzy logic based approach model is suitable to be incorporated in PSPICE-like tools for OFET circuits simulation.