Abstract

This paper presents a high performance chopper-Stabilized Two-stage operational amplifier for biomedical applications. This Two-stage is designed for low noise, low power, high PSRR and high CMRR. The Miller compensation technique (Cc) is used with a nulling active resistance (Rz) implemented using Transmission gate (TG) transistors for stable operation in feedback mode. Chopper stabilization technique has been widely used in amplifiers for flicker (1/f) noise and offsets reduction purposes using the principles of modulation and demodulation. Thus, the functionality and performance of modulation and demodulation circuits determines the realization and attainment of chopper stabilization. The operational amplifier was manufactured in a SPECTRE using GPDK 90nm CMOS technology with threshold voltages of a 0.17 V and -0.14 V achieve a low power 2.6uW, Hz nV / 5 . 13at 10Hz high CMRR up to 130dB and PSRR up to 70dB at 1V power supply.

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In a comparative framework, an ensemble Monte Carlo was used to elaborate the electron transport characteristics in two different silicon carbide (SiC) polytypes 3C-SiC and 4H-SiC. The simulation was performed using three-valley band structure model. These valleys are spherical and nonparabolic. The aim of this work is to forward the trajectory of 20,000 electrons under high-flied (from 50 kV to 600 kV) and high-temperature (from 200 K to 700 K). We note that this model has already been used in other studies of many Zincblende or Wurtzite semiconductors. The obtained results, compared with results found in many previous studies, show a notable drift velocity overshoot. This last appears in subpicoseconds transient regime and this overshoot is directly attached to the applied electric field and lattice temperature.

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