No abstract

Single-photon avalanche diodes photon detection efficiency (PDE) and breakdown uniformity are studied. An approach to increase the PDE based on controlled breakdown of the peripheral region of the junction is described. Parameters influencing and controlling the peripheral region breakdown are discussed. A collection efficiency >60% is demonstrated, nearly twice that of a conventional, planar breakdown device.Index Terms-Avalanche breakdown, CMOS single-photon avalanche diode (SPAD), image sensors, photodiodes.