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Integrating solid-state quantum emitters with nanophotonic resonators is essential for efficient spinphoton interfacing and optical networking applications. While diamond color centers have proven to be excellent candidates for emerging quantum technologies, their integration with optical resonators remains challenging. Conventional approaches based on etching resonators into diamond often negatively impact color center performance and offer low device yield. Here, we developed an integrated photonics platform based on templated atomic layer deposition of TiO2 on diamond membranes. Our fabrication method yields high-performance nanophotonic devices while avoiding etching wavelength-scale features into diamond. Moreover, this technique generates highly reproducible optical resonances and can be iterated on individual diamond samples, a unique processing advantage. Our approach enables highcooperativity interfacing between cavity photons and coherent color centers, opening a new pathway for integrated quantum photonics.

It is shown that the wide variation of apparent band-gap observed for thin films nominally referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. InN samples grown by remote plasma enhanced chemical vapour deposition show a change in band-gap between 1.8 and 1.0 eV that is not due to the Moss-Burstein effect, oxygen inclusion or quantum size effects, but for which changes in the growth temperature result in a strong change in stoichiometry. Material non-homogenity and non-stoichiometry appear to be general problems for InN growth. Excess nitrogen can be present at very high levels and indium rich material is also found. This work shows that the extent of the MossBurstein effect will have to be reassessed for InN.

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Color centers in diamond are widely explored as qubits in quantum technologies. However, challenges remain in the effective and efficient integration of these diamond-hosted qubits in device heterostructures. Here, nanoscale-thick uniform diamond membranes are synthesized via “smart-cut” and isotopically ( 12 C) purified overgrowth. These membranes have tunable thicknesses (demonstrated 50 to 250 nm), are deterministically transferable, have bilaterally atomically flat surfaces ( R q ≤ 0.3 nm), and bulk-diamond-like crystallinity. Color centers are synthesized via both implantation and in situ overgrowth incorporation. Within 110-nm-thick membranes, individual germanium-vacancy (GeV – ) centers exhibit stable photoluminescence at 5.4 K and average optical transition line widths as low as 125 MHz. The room temperature spin coherence of individual nitrogen-vacancy (NV – ) centers shows Ramsey spin dephasing times ( T 2 * ) and Hahn echo times ( T 2 ) as long as 150 and 400 μs, respectively. This platform enables the straightforward integration of diamond membranes that host coherent color centers into quantum technologies.