The European Space Agency's Planck satellite, launched on 14 May 2009, is the third-generation space experiment in the field of cosmic microwave background (CMB) research. It will image the anisotropies of the CMB over the whole sky, with unprecedented sensitivity ( ΔT T ∼ 2 × 10 −6 ) and angular resolution (∼5 arcmin). Planck will provide a major source of information relevant to many fundamental cosmological problems and will test current theories of the early evolution of the Universe and the origin of structure. It will also address a wide range of areas of astrophysical research related to the Milky Way as well as external galaxies and clusters of galaxies. The ability of Planck to measure polarization across a wide frequency range (30−350 GHz), with high precision and accuracy, and over the whole sky, will provide unique insight, not only into specific cosmological questions, but also into the properties of the interstellar medium. This paper is part of a series which describes the technical capabilities of the Planck scientific payload. It is based on the knowledge gathered during the on-ground calibration campaigns of the major subsystems, principally its telescope and its two scientific instruments, and of tests at fully integrated satellite level. It represents the best estimate before launch of the technical performance that the satellite and its payload will achieve in flight. In this paper, we summarise the main elements of the payload performance, which is described in detail in the accompanying papers. In addition, we describe the satellite performance elements which are most relevant for science, and provide an overview of the plans for scientific operations and data analysis.

Global acquisition of atmospheric wind profiles using a spaceborne direct-detection Doppler wind lidar is being accomplished following the launch of European Space Agency’s Aeolus mission. One key part of the instrument is a single-frequency, ultraviolet laser that emits nanosecond pulses into the atmosphere. High output energy and frequency stability ensure a sufficient signal-to-noise ratio of the backscatter return and an accurate determination of the Doppler frequency shift induced by the wind. This Letter discusses the design of the laser transmitter for the first Doppler wind lidar in space and its performance during the first year of the Aeolus mission, providing valuable insights for upcoming space lidar missions.

ESA deployed the first Doppler Wind lidar in space within its Earth Explorer Mission Aeolus. The objective of Aeolus is to provide tropospheric and lower stratospheric wind profiles globally for the improvement of weather forecasts on short and medium term. Spin-off products are profiles of atmospheric backscatter and extinctions coefficients and lidar ratio. The observations will also be used as input to air quality models and to verify climate model parameterization and predictability. After the successful launch in late August this year an intensive commissioning phase is taking place in the first three month of the mission, including the first switch on of the instrument ALADIN and its calibration in flight. First preliminary results will be presented during the talk.

The present work is a photoluminescence study of Si-embedded Stranski-Krastanov Ge quantum dots. The value of the conduction band offset is a result of the magnitude of the tensile strain in the Si surrounding the compressive strained Ge dot. Due to the increased Si/ Ge intermixing and reduced strain in the Si barrier, a reduction of the conduction band offset is observed at increased growth temperatures. The optical properties as derived from photoluminescence spectroscopy are correlated with structural properties obtained as a function of the growth temperature. High growth temperatures result in large Ge dots with low density due to the pronounced surface diffusion and Si/ Ge intermixing. As confirmed by photoluminescence, the band gap of the Ge dots increases with increased growth temperature due to the higher degree of Si/ Ge intermixing. The band alignment is of type II in these structures, but the occurrence of both spatially indirect and spatially direct transitions are confirmed in temperature-dependent photoluminescence measurements with varied excitation power conditions. An increasing temperature results in a gradual transition from the spatially indirect to the spatially direct recombination in the type-II band lineup, due to higher oscillator strength for the spatially direct transition combined with a higher population factor at higher temperatures.

The optical properties of Ge quantum dots embedded in Si were investigated by means of photoluminescence, with temperature and excitation power density as variable parameters. Two different types of recombination processes related to the Ge quantum dots were observed. A transfer from the spatially indirect to the spatially direct recombination in the type-II band lineup was observed with increasing temperature. A blueshift of the spatially indirect Ge quantum-dot-emission energy with increasing excitation power is ascribed to band bending at the type-II Si/Ge interface for high carrier densities. Comparative studies were performed on uncapped Ge dot structures.