Resolution is a key performance metric, which often defines the quality of a scanning electron microscope (SEM). Traditionally, there is the subjective measurement of the distance between two points on special "resolution" samples and there are several computer-based resolution-calculation methods. These computer-based resolution-calculation methods are much more precise than direct measurement, but none of them can currently be considered an objective way of measuring the resolution. The methods are still under development; therefore, objective testing is necessary. One approach to algorithm testing is to use simulated images. Simulated images are very useful for this purpose because they can be well-defined in all parameters unlike the real SEM images. Simulated images can be generated that closely mimic the gold-on-carbon SEM test sample images that usually consist of bright grains on a dark background. Simulation can account for edge effect, roughness of the substrate, different focusing, drift and vibration, and noise. Shapes, positions, and sizes of the grain structures are random. The simulated images can be then used for testing the resolution-calculation methods, especially for finding how the particular properties of SEM images affect the resultant instrument performance and image resolution. To support this testing, NIST has developed and made available a reference set of simulated SEM images generated using the methods described in this article.
Summary:A method for qualitative and quantitative analysis of scanning electron microscope (SEM) images for the determination of sharpness is presented in this paper. Described is a procedure for qualitative analysis based on a software program called SEM Monitor that can be applied to research or industrial SEMs for day-to-day performance monitoring. The idea is based on the fact that, as the electron beam scans the sample, the low-frequency changes in the video signal show information about the larger features and the high-frequency changes give data on finer details. The image contains information about the primary electron beam and about all the parts contributing to the signal formation in the SEM. If everything else is kept unchanged, with a suitable sample, the geometric parameters of the primary electron beam can be mathematically determined. An image of a sample, which has fine details at a given magnification, is sharper if there are more high frequency changes in it. In the SEM, a better focused electron beam yields a sharper image, and this sharpness can be measured. The method described is based on calculations in the frequency domain and can also be used to check and optimize two basic parameters of the primary electron beam, the focus, and the astigmatism.
Summary: This study introduces the idea of the sharpness concept in relationship to the determination of scanning electron microscope (SEM) performance. Scanning electron microscopes are routinely used in many manufacturing environments. Fully automated or semiautomated SEMs as metrology instruments are used in semiconductor production and other forms of manufacturing where the ability to measure small features with the smallest possible errors is essential. It is felt that these automated instruments must be routinely capable of 5 nm (or better) resolution at or below 1 kV accelerating voltage for the measurement of nominal 0.18-0.35 µm size parts of the integrated circuits. Testing and proving on a day-by-day basis that an instrument is performing well is not easy, but, understandably, is an industry need and concern. Furthermore, with the introduction of fully automated inspection and metrology instrumentation, not only does an appropriate, easy to obtain or manufacture sharpness measurement sample have to exist but also an objective and automated algorithm must be developed for its analysis. Both of these have been the object of a study at the National Institute of Standards and Technology (NIST), and the fundamentals are discussed in this paper and the computer-based automated analysis in a companion paper (Part II;Vladár et al. 1998). The method described in these papers is based on the analysis of the frequency domain representation of the SEM image and can also be used to check and optimize two basic parameters-focus and astigmatism-of the primary electron beam as related to a measure of image sharpness. The application of this technique to check regularly the resolution of the SEM in quantitative form will also be discussed.
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