Naphthyl end-capped oligothiophenes are a class of materials well suited for high-performance organics based devices. The formation of nanofibers on muscovite mica from 2,5-bis(naphth-2-yl)thiophene (NaT), 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2), and 5,5''-bis(naphth-2-yl)-2,2':5',2''-terthiophene (NaT3) as well as of the methoxy-functionalized variants MONaT, MONaT2, and MONaT3 is investigated via atomic force microscopy, X-ray diffraction, polarized fluorescence microscopy, and fluorescence spectroscopy. From polarized fluorescence microscopy spatially resolved molecular orientations are deduced revealing a profound anisotropy. Fibers from lying molecules grow along distinct substrate directions. Methoxy-functionalization substantially increases the crystallization into aligned fibers. In air Ostwald ripening is observed. The morphological variations of the aggregates result in specific optical signatures, disclosed by temperature dependent and spatially resolved fluorescence spectra.

We report on the microstructure, morphology, and growth of 5,5´-bis(naphth-2yl)-2,2´-bithiophene (NaT2) thin films deposited on graphene, characterized by grazingincidence X-ray diffraction (GIXRD) and complemented by atomic force microscopy (AFM) measurements. NaT2 is deposited on two types of graphene surfaces: custom-made samples where CVD-grown graphene layers are transferred onto a Si/SiO 2 substrate by us and common commercially transferred CVD graphene on Si/SiO 2 . Pristine Si/SiO 2 substrates are used as a reference. The NaT2 crystal structure and orientation depend strongly on the underlying surface, with the molecules predominantly lying-down on the graphene surface (face-on orientation) and standing nearly out-of-plane (edge-on orientation) on the Si/SiO 2 reference surface. Post growth GIXRD and AFM measurements reveal that the crystalline structure and grain morphology differ depending on whether there is polymer residue left on the graphene surface. In situ GIXRD measurements show that the thickness dependence of the intensity of the (111) reflection from the crystalline edge-on phase does not intersect zero at the beginning of the deposition process, suggesting that an initial wetting layer, corresponding to 1-2 molecular layers, is formed at the surface-film interface. By contrast, the (111) reflection intensity from the crystalline face-on phase grows at a constant rate as a function of film thickness during the entire deposition.

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