This paper describes a monolithically integrated ω z -gyroscope fabricated in a surface-micromaching technology. As functional structure, a 10 µm thick Silicon-Germanium layer is processed above a standard high voltage 0.35 µm CMOS-ASIC. Drive and Sense of the in plane double wing gyroscope is fully capacitively. Measurement of movement is also done fully capacitively in continuous-time baseband sensing. For characterization, the gyroscope chip is mounted on a breadboard with auxiliary circuits. A noise floor of 0.01 °/s/sqrt(Hz) for operation at 3 mBar is achieved.

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