The potential application of [t-Bu2GaSbEt2]2 (1) to serve as a single-source precursor for the deposition of GaSb films was investigated in detail. Crystalline GaSb films (sphalerite type) were grown on Si(100) by high-vacuum metal−organic chemical vapor deposition between 350 and 550 °C without the use of any carrier gas. The thermal properties of 1 were investigated by differential scanning calorimetry and thermogravimetric analysis/differential thermal analysis, whereas the GaSb films were characterized in detail by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy, and Auger electron spectroscopy.

Lithium ion batteries (LIBs) are already widely used in a variety of different applications in daily life and are now facing new challenges requiring significant enhancement of power, lifetime, cost, safety and flexibility. Our aim with regard to purposeful improvement of LIBs is to get insight on the atomic scale into the mechanisms during charging and discharging. Applying in-situ Xray diffraction (in-situ XRD) using synchrotron light the alloy phase evolution during galvanostatic electrochemical lithiation (charging) and delithiation (discharging) of an Al model anode was studied. It was found that the alloy phase Li 1 Al 1 is formed and dissolved, respectively, reproducibly and reversibly. To perform in-situ XRD two electrochemical cells, penetrable for X-ray radiation, were constructed, which can be operated on top of the diffractometer at synchrotron radiation facilities. With this approach it is possible to correlate electrochemistry, phase evolution and crystallographic orientation.

2 . -Crystalline GaSb films (sphalerite type) are grown on Si(100) by high-vacuum metal organic chemical vapor deposition at 400-550 °C using [tBu2GaSbEt2]2 (I) as a single-source precursor without any carrier gas. The thermal properties of (I) are investigated by DSC and TGA/DTA and the GaSb films are characterized in detail by means of XRD, SEM, TEM, AFM, EDS, EELS, and Auger electron spectroscopy. The absence of any carbon contamination within the GaSb films makes (I) very attractive for further MOCVD studies. -(SCHULZ*, S.; FAHRENHOLZ, S.; KUCZKOWSKI, A.; ASSENMACHER, W.; SEEMAYER, A.; HOMMES, A.; WANDELT, K.; Chem. Mater.