Graphene nanostructures, where quantum confinement opens an energy gap in the band structure, hold promise for future electronic devices. To realize the full potential of these materials, atomic-scale control over the contacts to graphene and the graphene nanostructure forming the active part of the device is required. The contacts should have a high transmission and yet not modify the electronic properties of the active region significantly to maintain the potentially exciting physics offered by the nanoscale honeycomb lattice. Here we show how contacting an atomically well-defined graphene nanoribbon to a metallic lead by a chemical bond via only one atom significantly influences the charge transport through the graphene nanoribbon but does not affect its electronic structure. Specifically, we find that creating well-defined contacts can suppress inelastic transport channels.

All material supplied via Aaltodoc is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. You must obtain permission for any other use. Electronic or print copies may not be offered, whether for sale or otherwise to anyone who is not an authorised user. An extended tight-binding model that includes up to third-nearest-neighbor hopping and a Hubbard meanfield interaction term is tested against ab initio local spin-density approximation results of band structures for armchair-and zigzag-edged graphene nanoribbons. A single tight-binding parameter set is found to accurately reproduce the ab initio results for both the armchair and zigzag cases. Transport calculations based on the extended tight-binding model faithfully reproduce the results of ab initio transport calculations of graphene nanoribbon-based systems.

The electronic properties of graphene edges have been predicted to depend on their crystallographic orientation. The so-called zigzag (ZZ) edges haven been extensively explored theoretically and proposed for various electronic applications. However, their experimental study remains challenging due to the difficulty in realizing clean ZZ edges without disorder, reconstructions, or the presence of chemical functional groups. Here, we propose the ZZ-terminated, atomically sharp interfaces between graphene and hexagonal boron nitride (BN) as experimentally realizable, chemically stable model systems for graphene ZZ edges. Combining scanning tunneling microscopy and numerical methods, we explore the structure of graphene-BN interfaces and show them to host localized electronic states similar to those on the pristine graphene ZZ edge.