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Advances in SPAD arrays propose improving the fill factor by confining several SPADs in the same well, with a main issue related to crosstalk. For measurements triggered only in well-defined time periods that can be known in advance, the pixels can be inhibited before the arrival of the crosstalk charge. This paper reports the crosstalk characterization of in an array of SPADs fabricated in a conventional CMOS technology in the same n-well (fill factor 67%). A long gating time gives a crosstalk not less than 2.75%, while reducing it below 2.5 ns completely eliminates crosstalk, as predicted by the theory and by TCAD simulations.

No abstract