The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. The design, measurement, and analysis of a range of artificial materials for use at terahertz frequencies are described. The chosen structures consist of arrays of cylindrical gold-plated pillars with period comparable to the wavelength of incident radiation. An ultraviolet ͑UV͒ micromachining approach to the fabrication of these high aspect-ratio pillars is described using the negative epoxy-based resin SU8. Lattice fence structures are also realized using the same method. Terahertz ͑THz͒ frequency time domain spectroscopy is performed on these structures in the range 200 GHz to 3.0 THz and the relative transmission of the structures is determined. The pass and stop bands are observed with peak transmission of up to 97%. Finite difference time domain simulations and complex photonic band structure calculations are shown to provide good descriptions of the electromagnetic properties of the structures and are used to interpret the observed transmission spectra.

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Nanosphere lithography, an inexpensive and high throughput technique capable of producing nanostructure (below 100 nm feature size) arrays, relies on the formation of a monolayer of self-assembled nanospheres, followed by custom-etching to produce nanometre size features on large-area substrates. A theoretical model underpinning the self-ordering process by centrifugation is proposed to describe the interplay between the spin speed and solution concentration. The model describes the deposition of a dense and uniform monolayer by the implicit contribution of gravity, centrifugal force and surface tension, which can be accounted for using only the spin speed and the solid/liquid volume ratio. We demonstrate that the spin recipe for the monolayer formation can be represented as a pathway on a 2D phase plane. The model accounts for the ratio of polystyrene nanospheres (300 nm), water, methanol and surfactant in the solution, crucial for large area uniform and periodic monolayer deposition. The monolayer is exploited to create arrays of nanoscale features using ‘short’ or ‘extended’ reactive ion etching to produce 30–60 nm (diameter) nanodots or 100–200 nm (diameter) nanoholes over the entire substrate, respectively. The nanostructures were subsequently utilized to create master stamps for nanoimprint lithography.

Understanding interfacial spin transport is key to developing magnetoelectonic devices, however, the exact nature of the parameters involved is unclear. Here, we report a detailed ferromagnetic resonance-based spintransport analysis on a variety of structures of both ferromagnetic (Co, CoFeB) and heavy metal layers (Pt, Ru) in order to fully quantify the interfacial spin-transport parameters. Enhanced spin-mixing conductance is observed for more closely matched ferromagnet and heavy metal crystal structures, and, significantly, the inclusion of a thickness-dependent spin-diffusion length gives a bulk value of 9.4 ± 0.7 nm for Pt, resolving reported discrepancies.