Investigating the formation and kinetics of O and OH in a He–H2O plasma jet using absorption spectroscopy and 0D modelling.

Atmospheric pressure plasmas are effective sources for reactive species, making them applicable for industrial and biomedical applications. We quantify ground-state densities of key species, atomic oxygen (O) and hydrogen (H), produced from admixtures of water vapour (up to 0.5%) to the helium feed gas in a radio-frequency-driven plasma at atmospheric pressure. Absolute density measurements, using two-photon absorption laser induced fluorescence, require accurate effective excited state lifetimes. For atmospheric pressure plasmas, picosecond resolution is needed due to the rapid collisional de-excitation of excited states. These absolute O and H density measurements, at the nozzle of the plasma jet, are used to benchmark a plug-flow, 0D chemical kinetics model, for varying humidity content, to further investigate the main formation pathways of O and H. It is found that impurities can play a crucial role for the production of O at small molecular admixtures. Hence, for controllable reactive species production, purposely admixed molecules to the feed gas is recommended, as opposed to relying on ambient molecules. The controlled humidity content was also identified as an effective tailoring mechanism for the O/H ratio.

Plasma treatments are common for increasing the surface energy of plastics, such as polypropylene (PP), to create improved adhesive properties. Despite the significant differences in plasma sources and plasma properties used, similar effects on the plastic film can be achieved, suggesting a common dominant plasma constituent and underpinning mechanism. However, many details of this process are still unknown. Here we present a study into the mechanisms underpinning surface energy increase of PP using atmospheric-pressure plasmas. For this we use the effluent of an atmospheric-pressure plasma jet (APPJ) since, unlike most plasma sources used for these treatments, there is no direct contact between the plasma and the PP surface; the APPJ provides a neutral, radical-rich environment without charged particles and electric fields impinging on the PP surface. The APPJ is a RF-driven plasma operating in helium gas with small admixtures of O 2 (0-1%), where the effluent propagates through open air towards the PP surface. Despite the lack of charged particles and electric fields on the PP surface, measurements of contact angle show a decrease from 93.9° to 70.1° in 1.4 s and to 35° in 120 s, corresponding to a rapid increase in surface energy from 36.4 mN m −1 to 66.5 mN m −1 in the short time of 1.4 s. These treatment effects are very similar to what is found in other devices, highlighting the importance of neutral radicals produced by the plasma. Furthermore, we find an optimum percentage of oxygen of 0.5% within the helium input gas, and a decrease of the treatment effect with distance between the APPJ and the PP surface. These observed effects are linked to two-photon absorption laser-induced fluorescence spectroscopy (TALIF) measurements of atomic oxygen density within the APPJ effluent which show similar trends, implying the importance of this radical in the surface treatment of PP. Analysis of the surface reveals a two stage mechanism for the production of polar bonds on the surface of the polymer: a fast reaction producing carboxylic acid, or a similar ketone, followed by a slower reaction that includes nitrogen from the atmosphere on the surface, producing amides from the ketones.

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In semiconductor manufacture photoresist acts as a mask to allow deposition and etching of the substrate in a controlled, localised manner. The photoresist (PR) consists of organic chain molecules that react in the presence of UV light to either harden (negative PR) or soften (positive PR), giving a pattern on the surface where soft PR is etched at a higher rate than hardened PR, leading to preferential etching of the substrate. The photoresist then must be removed to perform the next iteration of etching or deposition, which may happen multiple times for complicated architectures.The standard option to remove the photoresist is to use a low-pressure oxygen plasma discharge in a process