In this paper we present the design and performance of millimeter wave MMIC switches in the patented MA-COM AlGaAs heterojunction PIN Diode process that allow us to produce high power and low insertion loss devices. The design process from a reflective SPDT switch to a non-reflective version of the switch, with intense use of HFSS and ADS software, is presented. These switches were designed to meet demanding requirements: low insertion loss less than 0.8 dB, 40dBm peak power and 37dBm CW power, and 30dB isolation.

A monolithic high power, high linearity, broadband, PIN diode switch capable of handling greater than 1000 watts of pulsed peak RF power has been designed and developed using a patented glass/silicon technology. This technology designated HMIC, Heterolithic Microwave Integrated Circuit, has been developed for various mixed signal and control circuit function applications ranging from HF through microwave frequencies. The unique design and fabrication techniques required for the needed improvements in thermal resistance and peak-to-peak voltage handling of this high power switch are discussed in detail. In addition, the results of this development effort in terms of standard switch parameters; insertion loss, isolation, return loss, and power handling are presented in the following paper.

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