materials more generally. The value of V oc shifted with respect to the effective potential of the contacting solution, with slopes (∆V oc /∆E Eff) of-0.27 and-0.38 for p-Si/Gr and p-Si/h-BN respectively, indicating that band bending at the p-Si/h-BN and p-Si/Gr interfaces responds at least partially to changes in the electrochemical potential of the contacting liquid electrolyte. Additionally, SECCM is shown to be an effective method to interrogate the nanoscale photoelectrochemical behavior of an interface, showing little spatial variance over scales exceeding the grain size of the CVD-grown 2D materials in this work. The measurements demonstrated that the polycrystalline nature of the 2D materials had little effect on the results and confirmed that the macroscale measurements reflected the junction behavior at the nanoscale.

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The behavior of n-Si(111) photoanodes covered by monolayer sheets of fluorinated graphene (F-Gr) was investigated under a range of chemical and electrochemical conditions. The electrochemical behavior of n-Si/F-Gr and np(+)-Si/F-Gr photoanodes was compared to hydride-terminated n-Si (n-Si-H) and np(+)-Si-H electrodes in contact with aqueous Fe(CN)6(3-/4-) and Br2/HBr electrolytes as well as in contact with a series of outer-sphere, one-electron redox couples in nonaqueous electrolytes. Illuminated n-Si/F-Gr and np(+)-Si/F-Gr electrodes in contact with an aqueous K3(Fe(CN)6/K4(Fe(CN)6 solutions exhibited stable short-circuit photocurrent densities of ∼10 mA cm(-2) for 100,000 s (>24 h), in comparison to bare Si electrodes, which yielded nearly a complete photocurrent decay over ∼100 s. X-ray photoelectron spectra collected before and after exposure to aqueous anodic conditions showed that oxide formation at the Si surface was significantly inhibited for Si electrodes coated with F-Gr relative to bare Si electrodes exposed to the same conditions. The variation of the open-circuit potential for n-Si/F-Gr in contact with a series of nonaqueous electrolytes of varying reduction potential indicated that the n-Si/F-Gr did not form a buried junction with respect to the solution contact. Further, illuminated n-Si/F-Gr electrodes in contact with Br2/HBr(aq) were significantly more electrochemically stable than n-Si-H electrodes, and n-Si/F-Gr electrodes coupled to a Pt catalyst exhibited ideal regenerative cell efficiencies of up to 5% for the oxidation of Br(-) to Br2.

Atomic layer deposition (ALD) on mechanically exfoliated 2D layered materials spontaneously produces network patterns of metal oxide nanoparticles in triangular and linear deposits on the basal surface. The network patterns formed under a range of ALD conditions, and were independent of the orientation of the substrate in the

Chemically exfoliated MoS2 was covalently functionalized and characterized as a chemically sensitive vapor sensor using changes in dc electrical resistance to detect a variety of volatile organic compounds (VOCs). Regardless of the polarity of the functionality introduced to the surface, sensors derived from functionalized MoS2 showed high sensitivity for polar and nonpolar VOCs. Additionally, MoS2 functionalized with trifluoromethyl benzyl bromide exhibited a very high sensitivity to polar and nonpolar organic vapors relative to the electrical resistance response of 2H MoS2, 1T′ MoS2, or carbon black/polymer composite chemiresistive vapor sensors. Chemically functionalized MoS2 sensors retained >70% of their initial responsiveness to test analytes after at least 72 h in air.