Broad-band (4-20 000 cm) spectra of real and imaginary conductance of a set of high-quality pristine and AuCl-doped single-walled carbon nanotube (SWCNT) films with different transparency are systematically measured. It is shown that while the high-energy (≥1 eV) response is determined by well-known interband transitions, the lower-energy electrodynamic properties of the films are fully dominated by unbound charge carriers. Their main spectral effect is seen as the free-carrier Drude-type contribution. Partial localization of these carriers leads to a weak plasmon resonance around 100 cm. At the lowest frequencies, below 10 cm, a gap-like feature is detected whose origin is associated with the energy barrier experienced by the carriers at the intersections between SWCNTs. It is assumed that these three mechanisms are universal and determine the low-frequency terahertz-infrared electrodynamics of SWCNT wafer-scale films.

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Following the game‐changing high‐pressure CO (HiPco) process that established the first facile route toward large‐scale production of single‐walled carbon nanotubes, CO synthesis of cm‐sized graphene crystals of ultra‐high purity grown during tens of minutes is proposed. The Boudouard reaction serves for the first time to produce individual monolayer structures on the surface of a metal catalyst, thereby providing a chemical vapor deposition technique free from molecular and atomic hydrogen as well as vacuum conditions. This approach facilitates inhibition of the graphene nucleation from the CO/CO 2 mixture and maintains a high growth rate of graphene seeds reaching large‐scale monocrystals. Unique features of the Boudouard reaction coupled with CO‐driven catalyst engineering ensure not only suppression of the second layer growth but also provide a simple and reliable technique for surface cleaning. Aside from being a novel carbon source, carbon monoxide ensures peculiar modification of catalyst and in general opens avenues for breakthrough graphene‐catalyst composite production.