No abstract

No abstract

No abstract

The photoelectrochemical behaviour of n-GaN in contact with 1 M H 2 SO 4 and with acidic solutions containing Cl À ions was studied using rotating-ring-disk voltammetry, electrochemical impedance spectroscopy and etching experiments. It was found that n-GaN is stabilized against photoanodic decomposition in the presence of Cl À ions due to the competing oxidation of Cl À to Cl 2 . The competition kinetics were interpreted on the basis of a mechanism, in which intrinsic surface states take part in the photoanodic oxidation of Cl À . The participation of such intrinsic surface states may explain the discrepancies found in the literature concerning the photoelectrochemical behaviour of n-GaN.

No abstract