No abstract

This paper presents a duty cycle-based, dual-mode simultaneous wireless information and power transceiver (SWIPT) for Internet of Things (IoT) devices in which a sensor node monitors the received power and adaptively controls the single-tone or multitone communication mode. An adaptive power-splitting (PS) ratio control scheme distributes the received radio frequency (RF) energy between the energy harvesting (EH) path and the information decoding (ID) path. The proposed SWIPT enables the self-powering of an ID transceiver above 20 dBm input power, leading to a battery-free network. The optimized PS ratio of 0.44 enables it to provide sufficient harvested energy for self-powering and energy-neutral operation of the ID transceiver. The ID transceiver can demodulate the amplitude-shift keying (ASK) and the binary phase-shift keying (BPSK) signals. Moreover, for low-input power level, a peak-to-average power ratio (PAPR) scheme based on multitone is also proposed for demodulation of the information-carrying RF signals. Due to the limited power, information is transmitted in uplink by backscatter modulation instead of RF signaling. To validate our proposed SWIPT architecture, a SWIPT printed circuit board (PCB) was designed with a multitone SWIPT board at 900 MHz. The demodulation of multitone by PAPR was verified separately on the PCB. Results showed the measured sensitivity of the SWIPT to be −7 dBm, and the measured peak power efficiency of the RF energy harvester was 69% at 20 dBm input power level. The power consumption of the injection-locked oscillator (ILO)-based phase detection path was 13.6 mW, and it could be supplied from the EH path when the input power level was high. The ID path could demodulate 4-ASK- and BPSK-modulated signals at the same time, thus receiving 3 bits from the demodulation process. Maximum data rate of 4 Mbps was achieved in the measurement.

This paper presents a fast-switching Transmit/Receive (T/R) Single-Pole-Double-Throw (SPDT) Radio Frequency (RF) switch. Thorough analyses have been conducted to choose the optimum number of stacks, transistor sizes, gate and body voltages, to satisfy the required specifications. This switch applies six stacks of series and shunt transistors as big as 3.9 mm/160 nm and 0.75 mm/160 nm, respectively. A negative charge pump and a voltage booster generate the negative and boosted control voltages to improve the harmonics and to keep Inter-Modulation Distortion (IMD) performance of the switch over 100 dBc. A Low Drop-Out (LDO) regulator limits the boosted voltage in Absolute Maximum Rating (AMR) conditions and improves the switch performance for Process, Voltage and Temperature (PVT) variations. To reduce the size, a dense custom-made capacitor consisting of different types of capacitors has been presented where they have been placed over each other in layout considering the Design Rule Checks (DRC) and applied in negative charge pump, voltage booster and LDO. This switch has been fabricated and tested in a 90 nm Silicon-on-Insulator (SOI) process. The second and third IMD for all specified blockers remain over 100 dBc and the switching time as fast as 150 ns has been achieved. The Insertion Loss (IL) and isolation at 2.7 GHz are −0.17 dB and −33 dB, respectively. This design consumes 145 uA from supply voltage range of 1.65 V to 1.95 V and occupies 440 × 472 µm2 of die area.

This paper presents an analog front-end for fine-dust detection systems with a 77-dB-wide dynamic range and a dual-mode ultra-low noise TIA with 142-dBΩ towards the maximum gain. The required high sensitivity of the analog signal conditioning path dictates having a high sensitivity at the front-end while the Input-Referred Noise (IRN) is kept low. Therefore, a TIA with a high sensitivity to detected current bio-signals is provided by a photodiode module. The analog front end is formed by the TIA, a DC-Offset Cancellation (DCOC) circuit, a Single-to-Differential Amplifier (SDA), and two Programmable Gain Amplifiers (PGAs). Gain adjustment is implemented by a coarse-gain-step using selective loads with four different gain values and fine-gain steps by 42 dB dynamic range during 16 fine steps. The settling time of the TIA is compensated using a capacitive compensation which is applied for the last stage. An off-state circuitry is proposed to avoid any off-current leakage. This TIA is designed in a 0.18 µm standard CMOS technology. Post-layout simulations show a high gain operation with a 67 dB dynamic range, input-referred noise, less than 600 fA/√Hz in low frequencies, and less than 27 fA/√Hz at 20 kHz, a minimum detectable current signal of 4 pA, and a 2.71 mW power consumption. After measuring the full path of the analog signal conditioning path, the experimental results of the fabricated chip show a maximum gain of 142 dB for the TIA. The Single-to-Differential Amplifier delivers a differential waveform with a unity gain. The PGA1 and PGA2 show a maximum gain of 6.7 dB and 6.3 dB, respectively. The full-path analog front-end shows a wide dynamic range of up to 77 dB in the measurement results.