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Intense pulse pumped microlaser is proposed for high peak power and low timing jitter at high repetition rate. It is based on Intense and Fast Pulse Pump (IFPP) technique, in which fast pulse pumps up the upper-level population and then dumps it rapidly by Q-switching. That could come close to complete pumping efficiency to reduce thermal problems and contribute to suppress the timing jitter of passively Q-switched laser. In this work, linearly polarized 1064 nm beam from [100]-cut YAG/Nd3+:YAG and [110]-cut Cr4+:YAG passively Q-switched microlaser is directly guided into nonlinear crystals to obtain 532 nm and 266 nm output. By implementing IFPP concept, over 1 MW peak power, 215 ps pulse duration, 1 kHz pulses at 266 nm with reduced standard deviation timing jitter of 37 ns were obtained.

We present a giant-pulse generation laser realized by the emission cross-section control of a gain medium in a passively Q-switched Nd:YVO4 microchip laser with a Cr4+:YAG saturable absorber. Up to 1.17 MW peak power and 1.03 mJ pulse energy were obtained with a 100 Hz repetition rate. By combining the Nd:YVO4 crystal with a Sapphire plate, lower temperature difference between a pump region in the gain crystal and a crystal holder was obtained which helped to keep the cavity in stability zone at elevated temperatures and allowed the achievement of the high peak power for this laser system.

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