This paper report a statistical method of performing wafer lapping experimental using Design Of Experiment (DOE) technique in order to get best lapping time to reduced thickness of GaAs wafer. Lapping speed, lapping time, oscillator speed and weight was selected as four main factor determine the shortest time of thickness reduction. A complete 2 4 factorial of 4 factors (16 run) was design to determined the effect of selected factor. The lapping process was carried out using ULTRATEC Lapping& Polishing machine while the wafer thickness was characterized using Logitech non contact gauge. It was found that best lapping parameter was using lapping speed at 3 r.p.m, oscillator speed at 2 r.p.m and 3 weight block for duration of 240 sec. This parameter is able to reduce 156 ,um of wafer within 240 second without any crack problems and able to give good reference of reduction of GaAs wafer thickness process period

In the electronic device fabrication, etching is one of the important processes to do. For this work, the dry etching was done to silicon nitride layer under a CF 4 / O 2 gas mixture using reactive ion etching (RIE) process has been investigated. This etching process was carried out at a room temperature with gas pressure of 500 mTorr, RF power of 60-80 W, O 2 and CF 4 flow rate of 5-10 seem and 40-50 seem respectively. From the process, a statistical method of Design of Experiment (DOE) Pro XL software was utilized for appropriate analysis.

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