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It is a generally accepted perspective that type-II nanocrystal quantum dots (QDs) have low quantum yield due to the separation of the electron and hole wavefunctions. Recently, high quantum yield levels were reported for cadmium-based type-II QDs. Hence, the quest for finding non-toxic and efficient type-II QDs is continuing. Herein, we demonstrate environmentally benign type-II InP/ZnO/ZnS core/shell/shell QDs that reach a high quantum yield of ∼91%. For this, ZnO layer was grown on core InP QDs by thermal decomposition, which was followed by a ZnS layer via successive ionic layer adsorption. The small-angle X-ray scattering shows that spherical InP core and InP/ZnO core/shell QDs turn into elliptical particles with the growth of the ZnS shell. To conserve the quantum efficiency of QDs in device architectures, InP/ZnO/ZnS QDs were integrated in the liquid state on blue light-emitting diodes (LEDs) as down-converters that led to an external quantum efficiency of 9.4% and a power conversion efficiency of 6.8%, respectively, which is the most efficient QD-LED using type-II QDs. This study pointed out that cadmium-free type-II QDs can reach high efficiency levels, which can stimulate novel forms of devices and nanomaterials for bioimaging, display, and lighting.

Capacitive charge transfer at the electrode/electrolyte interface is a biocompatible mechanism for the stimulation of neurons. Although quantum dots showed their potential for photostimulation device architectures, dominant photoelectrochemical charge transfer combined with heavy-metal content in such architectures hinders their safe use. In this study, we demonstrate heavy-metal-free quantum dot-based nano-heterojunction devices that generate capacitive photoresponse. For that, we formed a novel form of nano-heterojunctions using type-II InP/ZnO/ZnS core/shell/shell quantum dot as the donor and a fullerene derivative of PCBM as the electron acceptor. The reduced electron–hole wavefunction overlap of 0.52 due to type-II band alignment of the quantum dot and the passivation of the trap states indicated by the high photoluminescence quantum yield of 70% led to the domination of photoinduced capacitive charge transfer at an optimum donor–acceptor ratio. This study paves the way toward safe and efficient nanoengineered quantum dot-based next-generation photostimulation devices.

In the next decade, we will witness the replacement of a majority of conventional light sources with light-emitting diodes (LEDs). Efficient LEDs other than phosphors can enhance their functionality and meet different lighting needs. Quantum dots (QDs) have high potential for future LED technology due to their sensitive band-gap tuning via the quantum confinement effect and compositional control, high photoluminescence quantum yield (PLQY), and mass-production capacity. Herein, we demonstrate white LEDs using QDs that reach over 150 lumens per electrical Watt. For that we synthesized green- and red-emitting ZnCdSe/ZnSe core/shell QDs by low-temperature nucleation, high-temperature shell formation, and postsynthetic trap-state removal. Their cadmium concentration is lower than 100 ppm, satisfying the current EU RoHS regulations, and their PLQY reaches a high level of 94%. The PLQY of QDs is maintained within the device on blue LED via liquid injection, and their integration at optimized optical densities leads to 129.6 and 170.4 lm/W for red-green-blue (RGB)- and green-blue (GB)-based white LEDs, respectively. Our simulations further showed that an efficiency level of over 230 lm/W is achievable using ultraefficient blue LED pumps. The simple fabrication and high performance of white LEDs using QD liquids show high promise for next-generation lighting devices.

This review summarizes optical nanomaterials, devices, and systems for neuromodulation. We describe their structures, working principles and bioelectronic applications with challenges and prospects.