Two spatially different nano-structured inorganic materials, titania nanosheets (TNS) and mesoporous silica (MPS), were integrated onto a glass substrate to form stacked composite thin films. Investigations were then carried out on photoinduced electron transfers between the tetrakis(1-methylpyridinium-4-yl)porphyrinatometal (4+)

For quartermicron lithography, fine pattern etching of bilayer resist was investigated using O2/N2 supermagnetron plasma. The maximum etch rate was obtained at a radio frequency (rf) phase difference of 150°–180° which was observed between two rf powers of the same frequency supplied to two parallel electrodes. The side etchings of resist walls were reduced by lowering the electrode (wafer) temperature to −30 °C. By the increment of N2 concentration from 0% to 60%, the etch rate decreased little, and the side etchings of resist walls became only ±0.015 μm at a self-bias voltage Vdc of −140 to −180 V. Microloading effect was greatly improved by lowering a wafer temperature to −30 °C and by increasing Vdc to −180 V.

Using a supermagnetron plasma apparatus, electrically conductive amorphous hydrogenated carbon (a-C:H) films were formed at wafer temperatures below 60 °C. CH4/N2 mixed gas was introduced into the discharge chamber and nitrogen-doped a-C:H films were formed on thermally oxidized Si wafers. A high electrical conductivity of 1.02×10−4 Ω cm−1 was obtained at a N2 concentration of 25%, a gas pressure of 50 mTorr, and a radio-frequency power of 600 W. Measured film growth rate and microhardness were 160 nm/min and 1650 kg/mm2, respectively. Nitrogen inclusion in a film was confirmed by secondary-ion-mass spectroscopy, and its atomic concentration was measured to be about 4×1022 atoms/cm3.

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