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Articles you may be interested inInfluence of Al/TiN/SiO2 structure on MOS capacitor, Schottky diode, and fin field effect transistors devices Physical and optoelectronic characterization of reactively sputtered molybdenum-silicon-nitride alloy metal gate electrodes Conduction mechanisms and reliability of thermal Ta 2 O 5 -Si structures and the effect of the gate electrode J. Appl. Phys. 97, 094104 (2005); 10.1063/1.1884758 Improved C -V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition Tantalum nitride (TaN) films were used as gate electrodes in MOS capacitors fabricated with 8-nm-thick SiO 2 as gate dielectric, and also used in Schottky diodes on n-type Si (100) substrates. TaN films with 20-and 100-nm-thick layers presented electrical resistivity of 439 and 472 lX cm, respectively. XPS measurements on these TaN film surfaces show oxygen incorporation, which can be related to air exposure. MOS capacitors with TaN/SiO structures, were fabricated on the same substrates. These devices were electrically characterized by capacitance-voltage (C-V) and current-voltage (I-V) measurements after sintering in a conventional furnace in a forming gas environment at 450 C, for different times between 0 and 30 min. From C-V measurements of the MOS capacitors, the extracted TaN work function, effective charge densities, and flatband voltage values were found to be between 4.23 and 4.42 eV, À10 11 and À10 12 cm À2 , and À0.12 and 0.25 V, respectively. From I-V measurements of the Schottky diodes, work function and ideality factor values between 4.40 and 4.53 eV, and 1.0 and 1.9, respectively, were extracted. The variation of the TaN work function (extracted from C-V and I-V curves), flatband voltage, and ideality factor values were related to dipole variations (at the TaN/SiO 2 interface), Ta and N vacancies in the TaN film, and oxygen incorporation on the TaN film surface. These results can contribute to work function engineering area for MOS technology.