Atom-like defects in solid-state hosts are promising candidates for the development of quantum information systems, but despite their importance, the host substrate/defect combinations currently under study have almost exclusively been found serendipitously. Here we systematically evaluate the suitability of host materials by applying a combined four-stage data mining and manual screening process to all entries in the Materials Project database, with literature-based experimental confirmation of band gap values. We identify a total of 541 viable hosts (16 unary and 74 binary) for quantum defect introduction and potential use in quantum information systems. This represents a significant (99.57%) reduction from the total number of known inorganic phases, and the application of additional selection criteria for specific applications will reduce their number even further. The screening principles outlined may easily be applied to previously unrealized phases and other technologically important materials systems.

The development of novel, intrinsic two-dimensional (2D) antiferromagnets presents the opportunity to vastly improve the efficiency of spintronic devices and sensors. The strong intrinsic antiferromagnetism and van der Waals layered structure exhibited by the bulk transition-metal oxychlorides provide a convenient system for the synthesis of such materials. In this work, we report the exfoliation of bulk FeOCl into and subsequent characterization of intrinsically antiferromagnetic thin-layer FeOCl nanosheets. The magnetic properties of bulk FeOCl, its lithium intercalate, and its nanosheet pellet are measured to determine the evolution of magnetic properties from the three-dimensional to the quasi-two-dimensional system. This work establishes FeOCl and isostructural compounds as a source for the development of two-dimensional intrinsic antiferromagnets.

ScSI, a missing member of the rare earth sulfoiodide (RESI) family of materials, has been synthesized for the first time. ScSI crystallizes in the FeOCl structure type, space group Pmmn (No. 59), a = 3.8904(2), b = 5.0732(9), c = 8.9574(6) Å. Both hyperspectral reflectance measurements and ab initio calculations support the presence of an indirect optical band gap of 2.0 eV. The bulk crystal is found to be readily exfoliatable, enabling its use as an optical component in novel heterostructures. The impact of lithium intercalation on its electronic band structure is also explored. A broader correlation is drawn between the observed structural trends in all known 1:1:1 sulfoiodide phases, cationic proportions, and electronic considerations. The realization of this phase both fills a significant synthetic gap in the literature and presents a novel exfoliatable phase for use as an optical component in next-generation heterostructure devices.

The ultrafast optical response of two nodal-line semimetals, ZrSiS and ZrSiSe, was studied in the near-infrared using transient reflectivity. The two materials exhibit similar responses, characterized by two features, well resolved in time and energy. The first transient feature decays after a few hundred femtoseconds, while the second lasts for nanoseconds. Using Drude-Lorentz fits of the materials' equilibrium reflectance, we show that the fast response is well-represented by a decrease of the Drude plasma 1 arXiv:2005.04248v1 [cond-mat.mtrl-sci] 8 May 2020 frequency, and the second feature by an increase of the Drude scattering rate. This directly connects the transient data to a physical picture in which carriers, after being excited away from the Fermi energy, return to that vicinity within a few hundred femtoseconds by sharing their excess energy with the phonon bath, resulting in a hot lattice that relaxes only through slow diffusion processes (ns). The emerging picture reveals that the sudden change of the density of carriers at the Fermi level instantaneously modifies the transport properties of the materials on a timescale not compatible with electron phonon thermalization and is largely driven by the reduced density of states at the nodal line.

Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er 3+ ions are limited by currently available host materials, motivating the development of new Er 3+ -containing materials. Here we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneous linewidths comparable to bulk linewidths in as-grown samples. We present optical spectroscopy data for each host material, which allows us to determine the level structure of each site, allowing us to compare the environments of Er 3+ introduced via implantation and via doping during growth. We demonstrate that implantation can generate a range of local environments for Er 3+ , including those observed in bulk-doped materials, and that the populations of these sites can be controlled with thermal processing.