The IR absorption spectra of hydrogenated amorphous films of an a-Si 0.60 Ge 0.40 :H solid solution that were obtained by plasmachemical deposition at different partial pressures of hydrogen P H 2 have been investigated.The oscillator strengths Γ that depend substantially on P H 2 have been determined. It is shown that hydrogen is contained in the films mainly in the GeH and SiH forms. Using integral absorptions I w , the concentrations of hydrogen were determined. The highest value of P H 2 is observed at Γ = 0.51, P = 4.16, N H = 9.7⋅10 21 cm -3 , and C H = 23.7 at.%. It has been established that the oscillator strengths depend on the hydrogen concentration: they decrease on hydrogen effusion and increase with the hydrogen concentration. It is shown that the hydrogen concentration in the films of the a-Si 0.60 Ge 0.40 :H solid solution can be controlled by changing its pressure.

No abstract