Electrical properties of hydrogenated amorphous Ge0.90Si0.1:Hx films

Solar energy converters based on a-Si0.80Ge0.20:H films

“…where μ c is the electron mobility in the conduction band, from which one deduces the dependence σ (T ) on 1/T −1 and its value 6 cm 2 /Vs −1 , N S is the effective density of states in the conduction band and its value, 10 21 cm −3 , was taken from Najafov (2000b), and E s = 10 4 V cm −1 . Knowing the experimental value for j oc = 10 −10 Å cm −2 the barrier height ϕ B = 1.2 eV and the diode quality factor n = 1.4 were found.…”

Optical Properties of Amorphous Films of an a-Si1−x Gex:H Solid Solution with Different Concentrations of Hydrogen

“…Correlation of the integral absorption I w A w with the hydrogen concentration shows that production of films with a controlled amount of hydrogen is of great practical importance. It is found that after effusion during thermal treatment (360-650 o C) the hydrogen concentration is C H = 1.3-23.7 at.% [4,23,24]. Moreover, it is established that the oscillator strengths Γ depend on the hydrogen concentration C H : they decrease during hydrogen effusion on increase in the partial pressure of hydrogen P H , in the atmosphere of which the a-Si 0.60 Ge 0.40 :H films were obtained.…”