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The reliability of components in the equipment of France Telecom has been observed for many years. The computerized database SADE (field failure analysis system) will be described. Some examples of failure analysis on field returns of integrated circuits and optoelectronic devices will be given. Investigations permit the reliability prediction models for new components to be improved.

Laser diodes of PBC (p‐substrate buried crescent) structure and emitting at 1300 nm, were subjected to calibrated electrostatic discharges (ESD). A failure analysis was then set up using a scanning optical microscope (SOM) and has allowed the localization of the damaged zones. The comparison of the results obtained with the electro‐optical characteristics has highlighted two types of complementary defects: (i) a so‐called optical type defect, since the optical power is significantly reduced, although leakage current has not occurred (active layer seriously damaged); (ii) a so‐called electrical type defect, since the leakage current increases, although the optical power is barely reduced (active layer weakly damaged).

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