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Auger analysis of oxidized GaAs surfaces, heat treated in vacuo, has been used to establish an accurate value for the oxide desorption temperature Tox. Major differences are found in the value of Tox for the surface oxides produced by thermal and ozone oxidation: 582±1 °C and 638±1°C, respectively. These temperature differences are also confirmed by reflection high-energy electron diffraction observations of the thermal cleaning of GaAs substrates prior to epitaxial growth in a molecular beam epitaxy system. It is suggested that the measured temperatures can be used in establishing appropriate growth conditions for ‘‘indium-free’’ GaAs substrates during molecular beam epitaxial growth.

Articles you may be interested inGrowth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50nm width trenches: The role of the nucleation layer and the recess engineering Selective area growth of InP on lithography-free, nanopatterned GaAs(001) by metalorganic chemical vapor deposition J. Vac. Sci. Technol. B 32, 011210 (2014); 10.1116/1.4855035 Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysisSelective area epitaxy of InP on masked ͑100͒ InP substrates is studied. InP layers are deposited between pairs of SiO 2 stripes using low-pressure metalorganic chemical vapor deposition. Layer thickness is investigated by surface profiling and scanning electron microscopy. For growth between oxide stripes, the growth velocity is enhanced by lateral diffusion of growth species from the masked region to the exposed region. Two transport mechanisms are known to exist: vapor phase diffusion and surface migration. However, most existing quantitative models focus only on the former. A new computational model, based on the diffusion equation with time dependent boundary conditions, is presented which describes the growth enhancement component due to surface migration. The role played by surface migration is shown to depend on nominal film thickness. The model correctly predicts a super growth enhanced region adjacent to the oxide. Previous quantitative models have not successfully described this aspect of growth near the oxide film.

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