Flexible high barrier materials are needed for the use of future PV module technologies. R2R processes playa key roll for the production of e.g. a-Si, !-Ic-Si, CIS, CIGS or CdTe modules. The requirements for such flexible high barrier materials are very demanding. Permeation values as low as 10-5 g/m2 day for water vapor transition (WVTR) and respectively 10-5 cm3/m2 day atm for oxygen transition (OTR) are needed. The basic way to produce such materials is combining oxide layers (e.g. AIOx, SiOx) and barrier coatings with suitable polymer substrates.

Thin films and single crystals of mercuric iodide (α-HgI2) have been investigated by scanning force microscopy. During the scan process, material evaporation is observed proceeding by hole formation and etching at steps. The ratio of etched volume per second and per interaction area between tip and mercuric iodide step edges is found to be constant for hole formation on an HgI2 crystal and for etching at a screw dislocation on HgI2 films. An estimate for the loading of the SFM tip gives a value comparable to the critical resolved shear stress in this material.

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