Gallium-doped nanostructural zinc oxide fibers have been fabricated by vapor-phase transport method of heating the mixture of zinc oxide, gallium oxide, and graphite powders in air. The zinc oxide fibers grew along [002] direction, forming a vertically aligned array that is predominantly perpendicular to the substrate surface. With a gallium doping concentration of 0.73 at. %, the corresponding carrier concentration and resistivity were 3.77×1020 cm−3 and 8.9×10−4 Ω cm, respectively. The field emission of these vertically aligned ZnO fiber arrays showed a low field emission threshold (2.4 V/μm at a current density of 0.1 μA/cm2), high current density, and high field enhancement factor (2317). The dependence of emission current density on the electric field followed Fowler–Nordheim relationship. The enhanced field emission is attributed to the aligned structure, good crystal quality, and especially, the improved electrical properties (increased conductivity and reduced work function) of the nanofibers due to gallium doping.

Nanostructural zinc oxide fibers have been fabricated by a simple vapor transport method of heating the mixture of zinc oxide, gallium oxide, and carbon powders in air. The zinc oxide nanofibers showed cauliflower-like, disordered, vertically and horizontally aligned morphologies in different temperature regions. The aligned nanofibers were composed of hexagonal zinc oxide with good crystallinity. Gallium was doped into zinc oxide with a concentration of 0.73 at. %. The growth process and the characteristics can be interpreted by a vapor-liquid-solid mechanism. The field emission of the vertically aligned zinc oxide fiber array showed a low field emission threshold, high current density, rapid surge, and high field enhancement factor. The threshold electric field is about 2.4 V/μm at a current density of 0.1 μA/cm−2. The field enhancement factor was 2991. The emission current density and the electric field followed the Fowler–Nordheim relationship.