Until now, acrylates have been the monomers of choice for use for step and flash imprint lithography ͑SFIL͒ etch barrier formulations, in part because of the commercial availability of silicon-containing acrylates ͑necessary for etch resistance͒, together with their low viscosities and capability for rapid photopolymerization. However, despite many desirable properties, the polymerization of acrylates via radical chain propagation causes some potential issues in the SFIL process as a result of the inhibition of these processes by oxygen. Vinyl ethers are prime candidates to replace acrylates. Their curing proceeds by a cationic mechanism, which is insensitive to oxygen and very rapid, while the vinyl ether group contribution to viscosity is significantly lower than that of an acrylate, silicon-containing vinyl ethers are not widely commercially available, and so were synthesized for this study. As expected, formulations based on these vinyl ethers were lower viscosity and faster curing than the acrylate etch barrier formulations presently employed, while the tensile strength of cured vinyl ether formulations were found to be higher than their acrylate counterparts. In spite of about twice higher template separation force compared with acrylates, the tensile strength of vinyl ether etch barrier formulations is about five times higher than that of acrylate formulations. Therefore, these vinyl ether-based formulations were used to pattern down to 50 nm features using the SFIL process.
Step and flash imprint lithography ͑SFIL͒ is a promising, low cost alternative to projection printing. This technique has demonstrated very high resolution and overlay alignment capabilities, but it is a contact printing technique so there is concern about defect generation and propagation. A series of experiments has been carried out with the goal of quantifying the effect of defect propagation. To that end, each unit process in SFIL was studied independently. The number of particles added during handling and transportation and due to SFIL machinery was deemed acceptable, and the added particles should not complicate the inspection of process defects. The concept of a ''self-cleaning'' process in which the imprint template becomes cleaner by imprinting was revisited. Inspection of an imprint template before and after imprinting revealed that the template actually becomes cleaner with imprinting. Visual inspection of multiple imprints did not reveal any systematic generation or propagation of defects.
Recent work onStep and Flash Imprint Lithography (SFIL) has been focused on process and materials fundamentals and demonstration of resolution capability. Etch transfer processes have been developed that are capable of transferring imprinted images though 150 nm of residual etch barrier, yielding sub 50 nm lines with aspect ratios greater than 8:1. A model has been developed for the photoinitiated, free radical curing of the acrylate etch barrier materials that have been used in the SFIL process. This model includes the effects of oxygen transport on the kinetics of the reaction and yields a deeper understanding of the importance of oxygen inhibition, and the resulting impact of that process on throughput and defect generation. This understanding has motivated investigation of etch barrier materials such as vinyl ethers that are cured by a cationic mechanism, which does not exhibit these same effects. Initial work on statistical defect analysis has is reported and it does not reveal pathological trends.
structure structure (organic substances) K 9000 -045Theoretical and Experimental Structures of Vinyl Chloride and Vinyl Bromide.--(COFFEY, D. JUN.; SMITH, B. J.; RADOM, L.; J.
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