We present a method of third harmonic generation at 355 nm by frequency mixing of fundamental and second harmonic radiation of an ytterbium nanosecond pulsed all-fiber laser in a type-I phase-matched LiB(3)O(5) (LBO) crystal where originally orthogonal polarization planes of the fundamental and second harmonic beams are aligned by an optically active quartz crystal. 8 W of ultraviolet light at 355 nm were achieved with 40% conversion efficiency from 1064 nm radiation. The conversion efficiency obtained in a type-I phase-matched LBO THG crystal was 1.6 times higher than the one achieved in a type-II LBO crystal at similar experimental conditions. In comparison to half-wave plates traditionally used for polarization alignment the optically active quartz crystal has much lower temperature dependence and requires simpler optical alignment.

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Chlorine (Cl2 or BCl3, with additions of Ar or N2), fluorine (SF6/Ar) and methane/hydrogen (CH4/H2/Ar or CH4/H2/N2) based plasmas have been examined as a function of composition, source and sample chuck power, and pressure, for dry etching of the typical luminescent sulphide phosphors (ZnS, SrS), conductive electrode materials [indium tin oxide, (ITO) and TiW] and insulators (Al2O3, alumina/titania-ATO) used in thin film electroluminescent displays. It is necessary to have both a high ion flux and an ion energy above a particular threshold (typically ⩾125 eV) in order to achieve practical etch rates for the high bond strength materials such as Al2O3, alumina/titania and SrS. The fastest etch rates for ZnS, Al2O3 and aluminum tin oxide are obtained with Cl2/Ar for SrS with SF6/Ar and for ITO with CH4/H2/Ar.

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