Integration of organic and inorganic electronic materials is one of the emerging approaches to achieve novel material functionalities. Here, we demonstrate a stable self-assembled monolayer of an alkylsilane grown at the surface of graphite and graphene. Detailed characterization of the system using scanning probe microscopy, X-ray photoelectron spectroscopy, and transport measurements reveals the monolayer structure and its effect on the electronic properties of graphene. The monolayer induces a strong surface doping with a high density of mobile holes (n > 10(13) cm(-2)). The ability to tune electronic properties of graphene via stable molecular self-assembly, including selective doping of steps, edges, and other defects, may have important implications in future graphene electronics.

The surface reactions of LaxAl2−xO3 ultrathin films deposited on atomically clean In0.2Ga0.8As by atomic layer deposition are studied by in situ high resolution x-ray photoelectron spectroscopy. Using 1:2 alternating cycles of La2O3 and Al2O3 results in a La:Al concentration ratio of 1:10. We found that the LaxAl2−xO3∕InGaAs interface consisted of interfacial Ga-suboxides and As–As bonds but no As- or In-oxides were detected. This suggests an interface formed by Ga–O–Al and Ga–O–La bonds from the precursor reaction.