<i>In situ</i> study of surface reactions of atomic layer deposited LaxAl2−xO3 films on atomically clean In0.2Ga0.8As

Aguirre-Tostado, F. S.; Milojević, Marko; Lee, B.; Kim, J.; Wallace, Robert M.

doi:10.1063/1.3009303

Cited by 34 publications

(15 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A deconvolution of the O 1s spectra of the as-grown film is expected to require two peaks, located at 530.0 eV, and 531.5 eV, respectively. The one at the lower binding energies is related to O atoms in HfO 2 , 13 and another at the higher binding energies is attributed to O in Al 2 O 3 and GeO x because it is difficult to separate them from each other due to having close binding energies [13,14]. After annealing at 500 °C, the intensity of the peak from the Al 2 O 3 and GeO x decreases.…”

Section: Resultsmentioning

confidence: 99%

Characterization of HfO[sub 2]∕Al[sub 2]O[sub 3] gate dielectric nanometer-stacks grown by atomic layer deposition on Ge substrates

Li¹,

Li²,

Xu³

et al. 2012

AIP Conference Proceedings

View full text Add to dashboard Cite

We report the characteristics of HfO 2 /Al 2 O 3 gate dielectric nanometer-stacks deposited on Ge substrates at 250 °C by atomic layer deposition using Hf[N(CH 3 )(C 2 H 5 )] 4 and Al(CH 3 ) 3 as the precursors. The annealing effect on the interface and electrical properties of stack films was investigated by X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and electrical measurements. It is demonstrated that the regrowth of GeO x during annealing is suppressed by Al 2 O 3 layer. And the annealed samples exhibit better electrical properties with reduction hysteresis, high capacitance value and improved leakage current density.

show abstract

Section: Resultsmentioning

confidence: 99%

Characterization of HfO[sub 2]∕Al[sub 2]O[sub 3] gate dielectric nanometer-stacks grown by atomic layer deposition on Ge substrates

Li¹,

Li²,

Xu³

et al. 2012

AIP Conference Proceedings

View full text Add to dashboard Cite

show abstract

“…20͒ and that for Al 2 O 3 appear at 531.6 eV. 21 The spectral intensity at these binding energies drastically decreased after HF treatment leaving only a faint component assigned to O-H bonding. 22 Similar results were also obtained for the In 0.25 Al 0.75 N, In 0.30 Al 0.70 N, and GaN surfaces.…”

Section: A Measurement Of Bulk Materials Constantsmentioning

confidence: 99%

Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

Akazawa

Gao

Hashizume

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

The valence band offsets, ⌬E V , of In 0.17 Al 0.83 N / GaN, In 0.25 Al 0.75 N / GaN, and In 0.30 Al 0.70 N / GaN heterostructures grown by metal-organic vapor phase epitaxy were evaluated by using x-ray photoelectron spectroscopy ͑XPS͒. The dependence of the energy position and the full width at half maximum of the Al 2p spectrum on the exit angle indicated that there was sharp band bending caused by the polarization-induced electric field combined with surface Fermi-level pinning in each ultrathin InAlN layer. The ⌬E V values evaluated without taking into account band bending indicated large discrepancies from the theoretical estimates for all samples. Erroneous results due to band bending were corrected by applying numerical calculations, which led to acceptable results. The evaluated ⌬E V values were 0.2Ϯ 0.2 eV for In 0.17 Al 0.83 N / GaN, 0.1Ϯ 0.2 eV for In 0.25 Al 0.75 N / GaN, and 0.0Ϯ 0.2 eV for In 0.30 Al 0.70 N / GaN. Despite the large decrease of around 1.0 eV in the band gap of InAlN layers according to the increase in the In molar fraction, the decrease in ⌬E V was as small as 0.2 eV. Therefore, the change in band-gap discontinuity was mainly distributed to that in conduction band offset.

show abstract

“…2 Furthermore, the oxides in the IL are often substoichiometric and may host gap electron states that enable trapassisted tunneling and effectively lower interface barriers. In some cases, even segregation of one element, e.g., arsenic, 3,4 at the interface is encountered as well as in-diffusion of semiconductor atoms (Ge, Sn, In) into the insulating oxide layer. 5,6 Evaluation of the effect these factors have on the interface barriers represents a significant experimental challenge because transport of charge carriers involves not only intrinsic band states of the semiconductor and insulator materials but also the IL-related contributions which are to be isolated against the background of intrinsic bands.…”

Section: Introductionmentioning

confidence: 99%

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Chou

O’Connor

O׳Mahony

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

Spectral analysis of optically excited currents in single-crystal (100)InAs/amorphous (a-)Al 2 O 3 / metal structures allows one to separate contributions stemming from the internal photoemission (IPE) of electrons into alumina and from the trapping-related displacement currents. IPE spectra suggest that the out-diffusion of In and, possibly, its incorporation in a-Al 2 O 3 lead to the development of %0.4 eV wide conduction band (CB) tail states. The top of the InAs valence band is found at 3.45 6 0.10 eV below the alumina CB bottom, i.e., at the same energy as at the GaAs/a-Al 2 O 3 interface. This corresponds to the CB and the valence band offsets at the InAs/a-Al 2 O 3 interface of 3.1 6 0.1 eV and 2.5 6 0.1 eV, respectively. However, atomic-layer deposition of alumina on InAs results in additional low-energy electron transitions with spectral thresholds in the range of 2.0-2.2 eV, which is close to the bandgap of AlAs. The latter suggests the interaction of As with Al, leading to an interlayer containing Al-As bonds providing a lower barrier for electron injection.Published by AIP Publishing.[http://dx

show abstract

In situ study of surface reactions of atomic layer deposited LaxAl2−xO3 films on atomically clean In0.2Ga0.8As

Cited by 34 publications

References 23 publications

Characterization of HfO[sub 2]∕Al[sub 2]O[sub 3] gate dielectric nanometer-stacks grown by atomic layer deposition on Ge substrates

Characterization of HfO[sub 2]∕Al[sub 2]O[sub 3] gate dielectric nanometer-stacks grown by atomic layer deposition on Ge substrates

Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Contact Info

Product

Resources

About