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In this work, we have studied bismuth telluride (Bi2Te3) thin films on Si(100) and SiO2/Si(100) substrates grown by Hot Wall Epitaxy (HWE) technique. The morphology of the surface was controlled by Atomic Force Microscopy (AFM). Reflection and transmission experiments in the mid‐infrared (MIR) spectral range were performed at room temperature. We have deduced the frequency dependence of the absorption coefficient. The refractive index was determined in the mid‐infrared (MIR) spectral range for these samples and the energy band gap was evaluated.