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The growth mechanisms of vertical compositional inhomogeneities were investigated in lattice-matched AlInN films prepared by metalorganic chemical vapour deposition. X-ray diffraction and secondary ion mass spectrometry measurements demonstrated a fluctuation of the indium (In) atomic fraction at the initial growth stage. Some In droplets formed on the surface of the inhomogeneous AlInN films, when In was excess caused by the initial Al-rich AlInN layer. The compositional inhomogeneities were attributed to the self-assembled In droplets by increasing the surface In content.