No abstract

Inefficiency of palm oil mill effluent (POME) treatment cause considerable environmental problems including from aesthetic point of view and inhibits the growth of the desirable aquatic biota necessary for surface water self-purification. Due to its low operating cost, anaerobic digestion of palm oil mill effluent (POME) is widely accepted by the managers, yet the colour of treated effluent (AnPOME) turned to dark brown. In this paper, the colourants in the AnPOME and its possible treatments have been reviewed with greater emphasis was put on coagulation/flocculation method.Application of anionic polymer as pre-treatment for integrated system has been shown to be necessary for sustainable AnPOME treatment including its sludge disposal. © Springer Science+Business Media New York 2013.

The removal of ammonia-nitrogen from aqueous solution by using partly decomposed oil palm empty fruit bunch (EFB) fibers has been investigated in this study. The unmodified EFB fiber was superior than highly concentrated sodium hydroxide (1.25 M) modified EFB for ammonia-nitrogen removal. The biosorption isotherm data for ammonia-nitrogen on unmodified EFB fibers were well fitted by Freundlich isotherm model that suggesting the heterogeneous adsorption behavior of the adsorption process (R 2 = 0.991). The adsorption kinetic modeling of the adsorption data indicated pseudosecond-order model is the better to describe the predicting a chemisorption process (R 2 = 0.9875).

Single Channel (SC) and Dual Channel (DC) VerticalStrained-SiGe Impact Ionization MOSFET (VESIMOS) has been successfully simulated and analyzed in this paper. Found out that SC VESIMOS operate in conventional MOSFET mode at V DS = 1.75V, with 10% to 30% Ge mole fraction. However for Ge=50%, it's operated in Impact Ionization (II) mode with fast switching speed of subthreshold value, S=9.8 mV/dec. A better performance in threshold voltage, V TH , S value and I ON /I OFF ratio were found in DC VESIMOS as compared to SC VESIMOS. The V TH =0.6V, S=10.98 mV/dec and I ON /I OFF = 1×10 13 were measured in DC VESIMOS with Ge=30% that clarify the advantage of DC utilization on VESIMOS device. These improvements were mainly due to the enhancement of electron mobility from 600 m 2 /V-s (first channel) to 1400 m 2 /V-s (second channel). The electron mobility was increased due to the splitting of conduction band valley into six fold where the electron mass are reduced in out of plane direction and thus enhanced the mobility of electron.