No abstract

We report Brillouin scattering gain in two novel Silicon-on-Insulator architectures – double slab and double-lobed waveguides. We show that the geometrical parameters influence the Brillouin gain and frequency shift, thereby offering flexibility to maximize gain.

We present the excitation of forward Brillouin scattering using orbital angular momentum modes in silicon waveguides through numerical simulations. The highest gain coefficients (~540W-1m-1) are obtained for equal charges of the pump, and Stoke’s modes.