Crystal structure and temperature dependence of magnetic susceptibility and electrical resistivity have been determined for GdTiSi and GdTiGe. Both compounds order ferromagnetically and for GdTiGe TC is 374 K which is a very high value for such kinds of compounds. The electronic structure for both compounds has been investigated by photoelectron spectroscopy and compared with calculations performed using the TB-LMTO method. A very good agreement with experiment was obtained, especially for GdTiGe. A strong hybrydization between the d states from Gd and Ti was found and a significant polarization of the Ti 3d electrons in GdTiGe was obtained which may be related to the enhanced indirect exchange between Gd magnetic moments.

No abstract

No abstract

No abstract

No abstract