In this study, we propose a high-performance resonator-based biosensor for mediator-free glucose identification. The biosensor is characterized by an air-bridge capacitor and fabricated via integrated passive device technology on gallium arsenide (GaAs) substrate. The exterior design of the structure is a spiral inductor with the air-bridge providing a sensitive surface, whereas the internal capacitor improves indicator performance. The sensing relies on repolarization and rearrangement of surface molecules, which are excited by the dropped sample at the microcosmic level, and the resonance performance variation corresponds to the difference in glucose concentration at the macroscopic level. The air-bridge capacitor in the modeled RLC circuit serves as a bio-recognition element to glucose concentration (εglucoseC0), generating resonant frequency shifts at 0.874 GHz and 1.244 GHz for concentrations of 25 mg/dL and 300 mg/dL compared to DI water, respectively. The proposed biosensor exhibits excellent sensitivity at 1.38 MHz per mg/dL with a wide detection range for glucose concentrations of 25–300 mg/dL and a low detection limit of 24.59 mg/dL. Additionally, the frequency shift and concentration are highly linear with a coefficient of determination of 0.98823. The response time is less than 3 s. We performed multiple experiments to verify that the surface morphology reveals no deterioration and chemical binding, thus validating the reusability and reliability of the proposed biosensor.

A quad‐band bandpass filter (BPF) using a sept‐mode double square‐ring loaded resonator (DSRLR) is presented in this article. Based on the symmetrical geometric construction of the DSRLR, the even‐ and odd‐mode analysis with theoretical equations is employed to analyze the proposed BPF, and current density are obtained. Additionally, multimode splitting and resonant characteristics of the proposed DSRLR are explored. Accordingly, the design procedure is given after a pair of feedlines with dual‐finger structure is added to the I/O ports to introduce extra transmission zeros (TZs). Four TZs—including two created by the dual‐finger feedlines—are produced to separate four passbands that exhibit a sharp skirt and high stopband rejection. Finally, a microstrip quad‐band BPF is fabricated on a Teflon substrate with four measured passbands centered at 2.46, 3.41, 6.65, and 9.09 GHz with insertion losses of 0.68, 0.73, 0.81, and 1.23 dB, respectively. A satisfactory agreement is achieved between the measurement results and full‐wave simulation results.

This article presents a compact quad flat no-lead (QFN)-packaged second-order bandpass filter (BPF) with intertwined inductors, a dendritic capacitor, and four air-bridge structures, which was fabricated on a gallium arsenide (GaAs) substrate by integrated passive device (IPD) technology. Air-bridge structures were introduced into an approximate octagonal outer metal track to provide a miniaturized chip size of 0.021 × 0.021 λ0 (0.8 × 0.8 mm2) for the BPF. The QFN-packaged GaAs-based bandpass filter was used to protect the device from moisture and achieve good thermal and electrical performances. An equivalent circuit was modeled to analyze the BPF. A description of the manufacturing process is presented to elucidate the physical structure of the IPD-based BPF. Measurements were performed on the proposed single band BPF using a center frequency of 2.21 GHz (return loss of 26.45 dB) and a 3-dB fractional bandwidth (FBW) of 71.94% (insertion loss of 0.38 dB). The transmission zero is located at the 6.38 GHz with a restraint of 30.55 dB. The manufactured IPD-based BPF can play an excellent role in various S-band applications, such as a repeater, satellite communication, and radar, owing to its miniaturized chip size and high performance.

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