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We fabricated and characterized a membrane external-cavity surface-emitting laser (MECSEL) emitting at 1640 nm. This is the first, to the best of our knowledge, description of this type of laser emitting at the long-wavelength telecommunication band. Double-sided diamond heat spreaders were used to efficiently dissipate heat. Emission producing 1.2 W of power was demonstrated. We suggest that optimization of the laser has the potential to increase generated power.

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The epitaxial growth and emission properties of a membrane external-cavity surface-emitting laser (MECSEL) are demonstrated in the 1750 nm band. A heterostructure consisting of InGaAs quantum wells enclosed by InGaAlAs barriers was deposited on InP by molecular beam epitaxy. The emitted power exceeded 1.5 W, which is the highest that has been reported in this spectral range to date.