High-Power 1770 nm Emission of a Membrane External-Cavity Surface-Emitting Laser

Thermal Behavior and Power Scaling Potential of Membrane External-Cavity Surface-Emitting Lasers (MECSELs)

“…The quantum defect differs by 1.7 percentage points only and the higher thermal conductivity of AlGaAs of ∼ 12 W/m•K can make a slight difference to the heat situation within the gain membrane [29]. On the other hand, the thermal resistances of the = 760 nm AlGaAs, sapphire-cooled MECSEL [28], the = 1.5 µm InAs/InP QD SiC-cooled MECSEL [6], and the = 1.77 µm InGaAlAs/InP diamond-cooled MECSEL [5] are in good agreement with the simulations. Although the thermal conductivities of the MECSELs included in Fig.…”

“…While for a gain membrane with a small thickness of less than 1 µm the benefit is rather small [28], gain membranes with higher thicknesses can benefit more from DSP. This aspect has been recently simulated for a = 1.77 µm gain membrane, which is about 2 µm thick, using a one-dimensional thermal model [5].…”

“…To date, MECSELs have been mostly experimentally investigated, with only a few specific issues analyzed through simulations to reveal the power scaling ability of this type of laser [2], [5]. In this article, a finite-element model was employed to examine the thermal limits of operating MECSELs with different pumping configurations and heat spreaders, i.e.…”

Quantum dot membrane external-cavity surface-emitting laser at 1.5 μm

“…Correspondingly, the thermal resistance 27 is obtained. The value of 2.3 K/W is more than one order of magnitude lower than in monolithic InP VECSELs 17,18 and rather in the same order of magnitude as the 1.77 μm-emitting MECSEL with a QW-based active region 14 . Tuning experiments have been conducted by inserting a birefringent filter within the cavity (see Fig.…”

“…In turn, this enables to use heat-spreading materials with lower conductivity but more cost-effective as silicon carbide (SiC). Owing to these advantages, recent efforts have led to the demonstration of MECSELs emitting in the red and near-infrared [9][10][11][12][13][14][15] . In this paper, we focus our attention on the important 1.5 μm telecom region, where the DBR technology is particularly difficult due to the low refractive index contrast of InP-based materials.…”