The application of liquid‐exfoliated 2D transition metal disulfides (TMDs) as the hole transport layers (HTLs) in nonfullerene‐based organic solar cells is reported. It is shown that solution processing of few‐layer WS2 or MoS2 suspensions directly onto transparent indium tin oxide (ITO) electrodes changes their work function without the need for any further treatment. HTLs comprising WS2 are found to exhibit higher uniformity on ITO than those of MoS2 and consistently yield solar cells with superior power conversion efficiency (PCE), improved fill factor (FF), enhanced short‐circuit current (JSC), and lower series resistance than devices based on poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) and MoS2. Cells based on the ternary bulk‐heterojunction PBDB‐T‐2F:Y6:PC71BM with WS2 as the HTL exhibit the highest PCE of 17%, with an FF of 78%, open‐circuit voltage of 0.84 V, and a JSC of 26 mA cm−2. Analysis of the cells' optical and carrier recombination characteristics indicates that the enhanced performance is most likely attributed to a combination of favorable photonic structure and reduced bimolecular recombination losses in WS2‐based cells. The achieved PCE is the highest reported to date for organic solar cells comprised of 2D charge transport interlayers and highlights the potential of TMDs as inexpensive HTLs for high‐efficiency organic photovoltaics.

Simple, scalable and cost-effective synthesis of quality two-dimensional (2D) transition metal dichalcogenides (TMDs) is critical for fundamental investigations but also for the widespread adoption of these low-dimensional materials in an expanding range of device applications.

Electrolyte additives have been widely used to address critical issues in current metal (ion) battery technologies. While their functions as solid electrolyte interface forming agents are reasonably well‐understood, their interactions in the liquid electrolyte environment remain rather elusive. This lack of knowledge represents a significant bottleneck that hinders the development of improved electrolyte systems. Here, the key role of additives in promoting cation (e.g., Li+) desolvation is unraveled. In particular, nitrate anions (NO3−) are found to incorporate into the solvation shells, change the local environment of cations (e.g., Li+) as well as their coordination in the electrolytes. The combination of these effects leads to effective Li+ desolvation and enhanced battery performance. Remarkably, the inexpensive NaNO3 can successfully substitute the widely used LiNO3 offering superior long‐term stability of Li+ (de‐)intercalation at the graphite anode and suppressed polysulfide shuttle effect at the sulfur cathode, while enhancing the performance of lithium–sulfur full batteries (initial capacity of 1153 mAh g−1 at 0.25C) with Coulombic efficiency of ≈100% over 300 cycles. This work provides important new insights into the unexplored effects of additives and paves the way to developing improved electrolytes for electrochemical energy storage applications.

Solution‐processed metal oxide thin‐film transistors (TFTs) represent a promising technology for applications in existing but also emerging large‐area electronics. However, high process temperatures and lengthy annealing times represent two remaining technical challenges. Different approaches aiming to address these challenges have been proposed but progress remains modest. Here, the development of high electron mobility metal oxide TFTs based on photonically converted Al2O3/ZrO2 and In2O3/ZnO bilayers acting as the high‐k dielectric and electron‐transporting channel, respectively is described. Sequential solution‐phase deposition and photonic processing lead to low substrate temperature (<200 °C) while minimizing the overall process time to less than 60 s without compromising the quality of the formed layers. The bilayer Al2O3/ZrO2 dielectric exhibits low leakage current density (10−6 A cm−2 at 1 MV cm−1), high geometric capacitance (≈120 nF cm−2) and breakdown electric field of ≈1 MV cm−1. Combining Al2O3/ZrO2 with a photonically converted In2O3/ZnO heterojunction channels, results in TFTs with high electron mobility (19 cm2 V−1 s−1), low operation voltage (≤2 V), high current on/off ratio (>106), and low subthreshold swing (108 mV dec−1), that can be manufactured even onto thermally sensitive polymer substrates. The work is a significant step toward all‐photonic processed metal oxide electronics.

Monolithic integration of perovskite−perovskite−organic subcells yields a triple-junction solar cell with a record opencircuit voltage of 3.03 V and a power conversion efficiency of 19.4%. The proposed triple-junction architecture represents a milestone toward scalable photovoltaics, targeting efficiencies beyond the limit of single-junction devices.