High-gain photodetectors with near-infrared (NIR) sensitivity are critical for biomedical applications such as photoplethysmography and optical coherence tomography where detected optical signals are relatively weak. Current photodetection technologies rely on avalanche photodiodes and photomultipliers to achieve high sensitivity. These devices, however, require a high operation voltage and are not compatible with CMOS based read-out circuits (ROCs). In this work we demonstrate a solution-proceeded NIR phototransistor structure based on a bulk heterojunction (BHJ) of a narrow bandgap polymer, poly(N-alkyl diketopyrrolo-pyrrole dithienylthieno[3,2-b]thiophene) (DPP-DTT), and [6,6]-phenyl-C61-butyric acid methylester (PCBM). The device exhibits ultrahigh responsivity (∼5 × 10(5) A W(-1)) as well as wide tunability (>1 × 10(4)) of photoconductive gain. Using the current-voltage and transient photocurrent measurements we show that the high responsivity is due to the combined effects of fast transport of holes in the polymer matrix and slow detrapping of electrons from the isolated PCBM domains. The wide gain tunability and the efficient suppression of noise current are achieved through the use of the optically tunable gate terminal. We demonstrate that our phototransistor can be used as the detection unit in a photoplethysmography sensor for non-invasive, continuous finger pulse wave monitoring. The high-sensitivity of the phototransistor allows the use of a low-power light source, thus reducing the overall power consumption of the sensor. This, together with the solution processibility and the simple device configuration (which is compatible with conventional ROCs), make the phototransistor a very promising component for the next generation low-cost, mobile biomedical devices for health monitoring and remote diagnostics.

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BackgroundAutologous and synthetic nasal and auricular frameworks require skin coverage. The surgeon’s decides on the appropriate skin coverage for reconstruction based on colour matching, subcutaneous tissue thickness, expertise and experience. One of the major complications of placing subcutaneous implants is the risk of extrusion (migration through the skin) and infection. However, knowledge of lessening the differential between the soft tissue and the framework can have important implications for extrusion. This study compared the mechanical properties of the skin commonly used as skin sites for the coverage in auricular and nasal reconstruction.MethodsUsing ten fresh human cadavers, the tensile Young’s Modulus of the skin from the forehead, forearm, temporoparietal, post-auricular and submandibular neck was assessed. The relaxation rate and absolute relaxation level was also assessed after 90 min of relaxation.ResultsThe submandibular skin showed the greatest Young’s elastic modulus in tension of all regions (1.28 MPa ±0.06) and forearm showed the lowest (1.03 MPa ±0.06). The forehead demonstrated greater relaxation rates among the different skin regions (7.8 MPa−07 ± 0.1). The forearm showed the lowest rate of relaxation (4.74 MPa−07 ± 0.1). The forearm (0.04 MPa ±0.004) and submandibular neck skin (0.04 MPa ±0.005) showed similar absolute levels of relaxation, which were significantly greater than the other skin regions (p < 0.05).ConclusionsThis study provides an understanding into the biomechanical properties of the skin of different sites allowing surgeons to consider this parameter when trying to identify the optimal skin coverage in nasal and auricular reconstruction.Electronic supplementary materialThe online version of this article (doi:10.1186/s40463-017-0210-6) contains supplementary material, which is available to authorized users.