No abstract

Metal halide perovskites (MHPs) have gained considerable attention due to their excellent optoelectronic performance, which is often attributed to unusual defect properties. We demonstrate that midgap defect levels can exhibit very large and slow energy fluctuations associated with anharmonic acoustic motions. Therefore, care should be taken classifying MHP defects as deep or shallow, since shallow defects may become deep and vice versa. As a consequence, charges from deep levels can escape into bands, and light absorption can be extended to longer wavelengths, improving material performance. The phenomenon, demonstrated with iodine vacancy in CH 3 NH 3 PbI 3 using a machine learning force field, can be expected for a variety of defects and dopants in many MHPs and other soft inorganic semiconductors. Since large-scale anharmonic motions can be precursors to chemical decomposition, a known problem with MHPs, we propose that materials that are stiffer than MHPs but softer than traditional inorganic semiconductors, such as Si and TiO 2 , may simultaneously exhibit excellent performance and stability.

Nonadiabatic (NA) molecular dynamics (MD) allows one to study farfrom-equilibrium processes involving excited electronic states coupled to atomic motions. While NAMD involves expensive calculations of excitation energies and NA couplings (NACs), ground-state properties require much less effort and can be obtained with machine learning (ML) at a fraction of the ab initio cost. Application of ML to excited states and NACs is more challenging, due to costly reference methods, many states, and complex geometry dependence. We developed a NAMD methodology that avoids time extrapolation of excitation energies and NACs. Instead, under the classical path approximation that employs a precomputed ground-state trajectory, we use a small fraction (2%) of the geometries to train neural networks and obtain excited-state energies and NACs for the remaining 98% of the geometries by interpolation. Demonstrated with metal halide perovskites that exhibit complex MD, the method provides nearly two orders of computational savings while generating accurate NAMD results.

Under natural conditions, plants are exposed to various abiotic and biotic stresses that trigger rapid changes in the production and removal of reactive oxygen species (ROS) such as hydrogen peroxide (H2O2). The ascorbate-glutathione pathway has been recognized to be a key player in H2O2 metabolism, in which reduced glutathione (GSH) regenerates ascorbate by reducing dehydroascorbate (DHA), either chemically or via DHA reductase (DHAR), an enzyme belonging to the glutathione S-transferase (GST) superfamily. Thus, DHAR has been considered to be important in maintaining the ascorbate pool and its redox state. Although some GSTs and peroxiredoxins may contribute to GSH oxidation, analysis of Arabidopsis dhar mutants has identified the key role of DHAR in coupling H2O2 to GSH oxidation. The reaction of DHAR has been proposed to proceed by a ping-pong mechanism, in which binding of DHA to the free reduced form of the enzyme is followed by binding of GSH. Information from crystal structures has shed light on the formation of sulfenic acid at the catalytic cysteine of DHAR that occurs with the reduction of DHA. In this review, we discuss the molecular properties of DHAR and its importance in coupling the ascorbate and glutathione pools with H2O2 metabolism, together with its functions in plant defense, growth, and development.

All-inorganic perovskites are promising candidates for solar energy and optoelectronic applications, despite their polycrystalline nature with a large density of grain boundaries (GBs) due to facile solution-processed fabrication. GBs exhibit complex atomistic structures undergoing slow rearrangements. By studying evolution of the Σ5(210) CsPbBr 3 GB on a nanosecond time scale, comparable to charge carrier lifetimes, we demonstrate that GB deformations appear every ∼100 ps and increase significantly the probability of deep charge traps. However, the deep traps form only transiently for a few hundred femtoseconds. In contrast, shallow traps appear continuously at the GB. Shallow traps are localized in the GB layer, while deep traps are in a sublayer, which is still distorted from the pristine structure and can be jammed in unfavorable conformations. The GB electronic properties correlate with bond angles, with notable exception of the Br−Br distance, which provides a signature of halide migration along GBs. The transient nature of trap states and localization of electrons and holes at different parts of GBs indicate that charge carrier lifetimes should be long. At the same time, charge mobility can be reduced. The complex, multiscale evolution of geometric and electronic structures of GBs rationalize the contradictory statements made in the literature regarding both benign and detrimental roles of GBs in perovskite performance and provide new atomistic insights into perovskite properties.