MoTe2 is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries; the semiconducting trigonal-prismatic 2H−phase, the semimetallic 1T ′ monoclinic phase, and the semimetallic orthorhombic T d structure 1-4 . The 2H−phase displays a band gap of ∼ 1 eV 5 making it appealing for flexible and transparent optoelectronics. The T d−phase is predicted to possess unique topological properties 6-9 which might lead to topologically protected non-dissipative transport channels 9 . Recently, it was argued that it is possible to locally induce phasetransformations in TMDs 3,10,11,14 , through chemical doping 12 , local heating 13 , or electric-field 14,15 to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements 11 . The combination of semiconducting and topological elements based upon the same compound, might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe2 through W substitution by unveiling the phase-diagram of the Mo1−xWxTe2 solid solution which displays a semiconducting to semimetallic transition as a function of x. We find that only ∼ 8 % of W stabilizes the T d−phase at room temperature. Photoemission spectroscopy, indicates that this phase possesses a Fermi surface akin to that of WTe2 16 .The properties of semiconducting and of semimetallic MoTe 2 are of fundamental interest in their own right, but are also for their potential technological relevance. In the mono-or few-layer limit it is a direct-gap semiconductor, while the bulk has an indirect bandgap 5,17,18 of ∼ 1 eV. The size of the gap is similar to that of Si, making 2H−MoTe 2 particularly appealing for both purely electronic devices 19,20 and optoelectronic applications 21 . Moreover, the existence of different phases opens up the possibility for many novel devices and architectures. For example, controlled conversion of the 1T ′ −MoTe 2 phase to the 2H−phase, as recently reported 22 , could

A longstanding challenge in nanoparticle characterization is to understand anisotropic distributions of organic ligands at the surface of inorganic nanoparticles. Here, we show that using electron energy loss spectroscopy in an aberration-corrected scanning transmission electron microscope we can directly visualize and quantify ligand distributions on gold nanorods (AuNRs). These experiments analyze dozens of particles on graphene substrates, providing insight into how ligand binding densities vary within and between individual nanoparticles. We demonstrate that the distribution of cetyltrimethylammonium bromide (CTAB) on AuNRs is anisotropic, with a 30% decrease in ligand density at the poles of the nanoparticles. In contrast, the distribution of (16-mercaptohexadecyl)­trimethylammonium bromide (MTAB) is more uniform. These results are consistent with literature reported higher reactivity at the ends of CTAB-coated AuNRs. Our results demonstrate the impact of electron spectroscopy to probe molecular distributions at soft–hard interfaces and how they produce spatially heterogeneous properties in colloidal nanoparticles.

Two-dimensional (2D) materials offer an ideal platform to study the strain fields induced by individual atomic defects, yet challenges associated with radiation damage have so far limited electron microscopy methods to probe these atomic-scale strain fields. Here, we demonstrate an approach to probe single-atom defects with sub-picometer precision in a monolayer 2D transition metal dichalcogenide, WSe2–2x Te2x . We utilize deep learning to mine large data sets of aberration-corrected scanning transmission electron microscopy images to locate and classify point defects. By combining hundreds of images of nominally identical defects, we generate high signal-to-noise class averages which allow us to measure 2D atomic spacings with up to 0.2 pm precision. Our methods reveal that Se vacancies introduce complex, oscillating strain fields in the WSe2–2x Te2x lattice that correspond to alternating rings of lattice expansion and contraction. These results indicate the potential impact of computer vision for the development of high-precision electron microscopy methods for beam-sensitive materials.

Non-platinum group metal (non-PGM) electrocatalysts for the oxygen reduction reaction (ORR) are generally composed of iron, nitrogen, and carbon synthesized through high-temperature pyrolysis. Among the various types of precursors, metal–organic frameworks (MOFs), zeolitic imidazolate framework (ZIF)-8 in particular, have often been used in the synthesis. The pyrolysis of ZIF-8 precursor relies on the use of Zn as a sacrificial metal (SM), and the optimal processing temperatures often exceed 1000 °C to generate active non-PGM catalysts. The high pyrolysis temperature tends to result in heterogeneous active moieties ranging from Fe single atoms to nanoparticles. In this study, we present the synthesis of non-PGM catalysts using Cd as the sacrificial metal instead of Zn. By using Cd, we were able to generate active non-PGM electrocatalysts from the MOF precursors at a low pyrolysis temperature of 750 °C, which helps preserve the single atomic iron active sites.

Spatially nonuniform strain is important for engineering the pseudomagnetic field and band structure of graphene. Despite the wide interest in strain engineering, there is still a lack of control on device-compatible strain patterns due to the limited understanding of the structure-strain relationship. Here, we study the effect of substrate corrugation and curvature on the strain profiles of graphene via combined experimental and theoretical studies of a model system: graphene on closely packed SiO nanospheres with different diameters (20-200 nm). Experimentally, via quantitative Raman analysis, we observe partial adhesion and wrinkle features and find that smaller nanospheres induce larger tensile strain in graphene; theoretically, molecular dynamics simulations confirm the same microscopic structure and size dependence of strain and reveal that a larger strain is caused by a stronger, inhomogeneous interaction force between smaller nanospheres and graphene. This molecular-level understanding of the strain mechanism is important for strain engineering of graphene and other two-dimensional materials.